MT18KBZS1G72AKZ-1G6E1

Electrical Specifications
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device's data sheet is not implied. Exposure to ab-
solute maximum rating conditions for extended periods may adversely affect reliability.
Table 7: Absolute Maximum Ratings
Symbol Parameter Min Max Units
V
DD
V
DD
supply voltage relative to V
SS
–0.4 1.975 V
V
IN
, V
OUT
Voltage on any pin relative to V
SS
–0.4 1.975 V
Table 8: Operating Conditions
Symbol Parameter Min Nom Max Unit Notes
V
DD
V
DD
supply voltage 1.283 1.35 1.45 V
1.425 1.5 1.575 V 1
V
REFCA(DC)
Input reference voltage command/
address bus
0.49 × V
DD
0.5 × V
DD
0.51 × V
DD
V
V
REFDQ(DC)
I/O reference voltage DQ bus 0.49 × V
DD
0.5 × V
DD
0.51 × V
DD
V
I
VTT
Termination reference current from V
TT
–600 600 mA
V
TT
Termination reference voltage (DC) – command/
address bus
0.49 × V
DD
-
20mV
0.5 × V
DD
0.51 × V
DD
+
20mV
V 2
I
I
Input leakage current; Any input
0V V
IN
V
DD
; V
REF
input 0V V
IN
0.95V (All other pins not under
test = 0V)
Address in-
puts, RAS#,
CAS#, WE#, BA
–36 0 36 µA
S#, CKE, ODT,
CK, CK#
–18 0 18
DM –4 0 4
I
OZ
Output leakage current; 0V V
OUT
V
DDQ
; DQ and ODT are disabled;
ODT is HIGH
DQ, DQS,
DQS#
–10 0 10 µA
I
VREF
V
REF
supply leakage current; V
REFDQ
= V
DD
/2 or
V
REFCA
= V
DD
/2 (All other pins not under test = 0V)
–18 0 18 µA
T
A
Module ambient operating tem-
perature
Commercial 0 70 °C 3, 4
T
C
DDR3 SDRAM component case op-
erating temperature
Commercial 0 95 °C 3, 4, 5
Notes:
1. Module is backward-compatible with 1.5V operation. Refer to device specification for
details and operation guidance.
2. V
TT
termination voltage in excess of the stated limit will adversely affect the command
and address signals’ voltage margin and will reduce timing margins.
3. T
A
and T
C
are simultaneous requirements.
4. For further information, refer to technical note TN-00-08: ”Thermal Applications,”
available on Micron’s web site.
5. The refresh rate is required to double when 85°C < T
C
95°C.
8GB (x72, ECC, DR) 244-Pin DDR3L ULP Mini-UDIMM
Electrical Specifications
PDF: 09005aef84c35c80
kbs18c1gx72akz.pdf - Rev. D 5/13 EN
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 9: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
8GB (x72, ECC, DR) 244-Pin DDR3L ULP Mini-UDIMM
DRAM Operating Conditions
PDF: 09005aef84c35c80
kbs18c1gx72akz.pdf - Rev. D 5/13 EN
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 10: DDR3 I
CDD
Specifications and Conditions – 8GB (Die Revisions E and J)
Values are for the MT41K1G8 DDR3L SDRAM only and are computed from values specified in the
8Gb (1 Gig x 8) 1.35V TwinDie component data sheet
Parameter Symbol 1600 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
CDD0
702 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
CDD1
801 mA
Precharge power-down current: Slow exit I
CDD2P0
324 mA
Precharge power-down current: Fast exit I
CDD2P1
450 mA
Precharge quiet standby current I
CDD2Q
450 mA
Precharge standby current I
CDD2N
450 mA
Precharge standby ODT current I
CDD2NT
513 mA
Active power-down current I
CDD3P
504 mA
Active standby current I
CDD3N
504 mA
Burst read operating current I
CDD4R
1620 mA
Burst write operating current I
CDD4W
1332 mA
Refresh current I
CDD5B
2277 mA
Self refresh temperature current: MAX T
C
= 85°C I
CDD6
360 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
CDD6ET
450 mA
All banks interleaved read current I
CDD7
2187 mA
Reset current I
CDD8
360 mA
8GB (x72, ECC, DR) 244-Pin DDR3L ULP Mini-UDIMM
I
DD
Specifications
PDF: 09005aef84c35c80
kbs18c1gx72akz.pdf - Rev. D 5/13 EN
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.

MT18KBZS1G72AKZ-1G6E1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3L SDRAM 8GB 244MUDIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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