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NTP5863NG

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2011
July, 2011 − Rev. 2
1 Publication Order Number:
NTP5863N/D
NTP5863N
N-Channel Power MOSFET
60 V, 97 A, 7.8 mW
Features
• Low R
DS(on)
• High Current Capability
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (T
J
= 25°C Unless otherwise specified)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 V
Gate−to−Source Voltage − Continuous V
GS
$20 V
Gate−to−Source Voltage − Nonrepetitive
(T
P
< 10 ms)
V
GS
30 V
Continuous Drain
Current
Steady
State
T
C
= 25°C
I
D
97
A
T
C
= 100°C 68
Power Dissipation Steady
State
T
C
= 25°C P
D
150 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
383 A
Operating and Storage Temperature Range T
J
, T
stg
−55 to
+175
°C
Source Current (Body Diode) I
S
97 A
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.1 mH, I
L(pk)
= 56 A)
E
AS
157 mJ
Peak Diode Recovery (dV/dt) dV/dt 4.1 V/ns
Lead Temperature for Soldering
Purposes (1/8″ from Case for 10 Seconds)
T
L
260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Case (Drain) Steady State
R
q
JC
1.0
°C/W
Junction−to−Ambient − Steady State (Note 1)
R
q
JA
36
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
http://onsemi.com
TO−220AB
CASE 221A
STYLE 5
1
2
3
4
MARKING DIAGRAMS
& PIN ASSIGNMENTS
G = Pb−Free Device
A = Assembly Location
Y = Year
WW = Work Week
NTP
5863NG
AYWW
1
Gate
3
Source
4
Drain
2
Drain
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
60 V
7.8 mW @ 10 V
R
DS(on)
MAX I
D
MAXV
(BR)DSS
97 A
G
S
N−CHANNEL MOSFET
D
NTP5863N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C Unless otherwise specified)
Characteristics
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 mA
60 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
I
D
= 250 mA, ref to 25°C
47 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V
V
DS
= 60 V
T
J
= 25°C 1.0 mA
T
J
= 125°C 50
Gate−Body Leakage Current I
GSS
V
DS
= 0 V, V
GS
= $20 V $100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(th)
V
GS
= V
DS
, I
D
= 250 mA
2.0 4.0 V
Negative Threshold Temperature Coefficient V
GS(th)
/T
J
9.1 mV/°C
Drain−to−Source On−Resistance R
DS(on)
V
GS
= 10 V, I
D
= 20 A 6.5 7.8
mW
Forward Transconductance g
FS
V
DS
= 15 V, I
D
= 30 A 12 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
iss
V
DS
= 25 V, V
GS
= 0 V,
f = 1 MHz
3200
pF
Output Capacitance C
oss
350
Transfer Capacitance C
rss
230
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 48 V,
I
D
= 48 A
55
nC
Threshold Gate Charge Q
G(TH)
3.4
Gate−to−Source Charge Q
GS
14.5
Gate−to−Drain Charge Q
GD
19
Gate Resistance R
G
0.4
W
SWITCHING CHARACTERISTICS, V
GS
= 10 V (Note 3)
Turn−On Delay Time
t
d(on)
V
GS
= 10 V, V
DD
= 48 V,
I
D
= 48 A, R
G
= 2.5 W
10
ns
Rise Time t
r
34
Turn−Off Delay Time t
d(off)
25
Fall Time t
f
9.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V
I
S
= 48 A
T
J
= 25°C 0.96 1.5
V
dc
T
J
= 150°C 0.85
Reverse Recovery Time t
rr
V
GS
= 0 V
dc
, I
S
= 48 A
dc
,
dI
S
/dt = 100 A/ms
32
ns
Charge Time t
a
20
Discharge Time t
b
12
Reverse Recovery Stored Charge Q
RR
28 nC
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTP5863N
http://onsemi.com
3
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
543210
0
25
50
75
125
150
175
200
75432
0
50
100
150
Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
10987654
0.000
0.005
0.010
0.015
0.020
0.030
100908070605040
0.0060
0.0065
0.0070
0.0075
0.0080
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
15012510050250−25−50
0.6
0.8
1.0
1.6
1.8
2.0
60302010
100
1000
10,000
100,000
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
100
10 V
5.5 V
V
GS
= 6.5 V
4.5 V
5.0 V
7.5 V
T
J
= 25°C
25
75
125
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
T
J
= 25°C
V
GS
= 10 V
75 175
1.2
1.4
2.2
V
GS
= 10 V
I
D
= 20 A
40 50
T
J
= 25°C
T
J
= 150°C
V
GS
= 0 V
7.0 V
6
175
200
I
D
= 20 A
0.025
302010
P1-P3P4-P6

NTP5863NG

Mfr. #:
Buy NTP5863NG
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET TO220 60V 76A 8MOHM
Lifecycle:
New from this manufacturer.
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