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MBR3045WTG

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 5
1 Publication Order Number:
MBR3045WT/D
MBR3045WTG
Switch Mode
Power Rectifier
These state−of−the−art devices use the Schottky Barrier principle
with a platinum barrier metal.
Features
• Dual Diode Construction; Terminals 1 and 3 may be Connected for
Parallel Operation at Full Rating
• Guardring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• Popular TO−247 Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 4.3 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
45 V
Average Rectified Forward Current
(Rated V
R
, T
C
= 105°C) Per Device
Per Diode
I
F(AV)
30
15
A
Peak Repetitive Forward Current,
(Rated V
R
, Square Wave, 20 kHz)
Per Diode
I
FRM
30 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
FSM
200 A
Peak Repetitive Reverse Current (2.0 ms,
1.0 kHz) Per Diode (See Figure 6)
I
RRM
2.0 A
Storage Temperature Range T
stg
−65 to +175 °C
Operating Junction Temperature (Note 1) T
J
−65 to +175 °C
Peak Surge Junction Temperature
(Forward Current Applied)
T
J(pk)
175 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−247
CASE 340AL
2
1
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES, 45 VOLTS
1
3
2
4
3
Device Package Shipping
ORDERING INFORMATION
MBR3045WTG TO−247
(Pb−Free)
30 Units/Rail
http://onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
MBR3045WT
AYWWG
MBR3045WTG
http://onsemi.com
2
THERMAL CHARACTERISTICS (Per Diode)
Rating
Symbol Max Unit
Thermal Resistance, Junction−to−Case
Junction−to−Ambient
R
q
JC
R
q
JA
1.4
40
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode)
Instantaneous Forward Voltage (Note 2)
(i
F
= 20 Amps, T
C
= 125°C)
(i
F
= 30 Amps, T
C
= 125°C)
(i
F
= 30 Amps, T
C
= 25°C)
v
F
0.6
0.72
0.76
V
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
C
= 125°C)
(Rated dc Voltage, T
C
= 25°C)
i
R
100
1.0
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
0
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
0.1
V
R
, REVERSE VOLTAGE (VOLTS)
200
0.1
0.01
100.2
, INSTANTANEOUS FORWARD CURRENT (AMPS)i
F
0.4 0.6
100
5.0 50
1.0
0.8 1.4
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current
15 3025 35
50
30
20
, REVERSE CURRENT (mA)I
R
100
10
1.0 1.2
1.0
5.0
3.0
2.0
0.5
0.3
0.2
T
J
= 150°C
25°C
40 45
T
J
= 150°C
25°C
125°C
100°C
75°C
MBR3045WTG
http://onsemi.com
3
TYPICAL CHARACTERISTICS
7060
T
C
, CASE TEMPERATURE (°C)
15
10
5.0
0
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
200
20
10
5.0
0
1080
, AVERAGE FORWARD CURRENT (AMPS)I
F(AV)
90 110100
20
5.0 40
15
P
F(AV)
, AVERAGE FORWARD POWER DISSIPATION (WATTS)
120 140130
Figure 3. Current Derating (Per Leg) Figure 4. Forward Power Dissipation (Per Leg)
15 3025 35
dc
SQUARE
WAVE
(CAPACITIVELOAD)
I
PK
I
AV
+ 20, 10, 5
0.10.05
V
R
, REVERSE VOLTAGE (VOLTS)
1000
700
600
400
300
0.2
C, CAPACITANCE (pF)
0.5 2.01.0
3000
5.0 5010
Figure 5. Capacitance
500
2000
900
800
Figure 6. Test Circuit for Repetitive Reverse
Current
2.0 ms
1.0 kHz
12 V 100
V
CC
12 Vdc
2N2222
CURRENT
AMPLITUDE
ADJUST
0-10 AMPS
100 W
CARBON
2N6277
1.0 CARBON
1N5817
D.U.T.
2.0 kW
+150 V, 10 mAdc
4.0 mF
+
20
SINE WAVE
RESISTIVE LOAD
T
J
= 125°C
160150
dc
SQUARE
WAVE
(CAPACITIVELOAD)
I
PK
I
AV
+ 20, 10, 5
I
PK
I
AV
+ p(RESISTIVELOAD)
P1-P3P4-P4

MBR3045WTG

Mfr. #:
Buy MBR3045WTG
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 30A 45V
Lifecycle:
New from this manufacturer.
Delivery:
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