FDB7030L Datasheet FDB7030L, FDB7030L_L86Z, FDP7030L | P1-P3

June 2003

2003 Fairchild Semiconductor Corporation

FDP7030L / FDB7030L Rev E(W)

FDP7030L / FDB7030L

N-Channel Logic Level PowerTrench



MOSFET

General Description

This N-Channel Logic Level MOSFET has been

designed specifically to improve the overall efficiency of

DC/DC converters using either synchronous or

conventional switching PWM controllers.

These MOSFETs feature faster switching and lower

gate charge than other MOSFETs with comparable

R

DS(ON)

specifications.

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power

supply designs with higher overall efficiency.

It has been optimized for low gate charge, low R

DS(ON)

and fast switching speed.

Features

• 80A, 30 V R

DS(ON)

= 7 mΩ @ V

GS

= 10 V

R

DS(ON)

= 10 mΩ @ V

GS

= 4.5 V

• Critical DC electrical parameters specified at

elevated temperature

• High performance trench technology for extremely

low R

DS(ON)

• 175°C maximum junction temperature rating

S

G

D

TO-220

FDP Series

D

G

S

TO-263AB

FDB Series

S

G

D

Absolute Maximum Ratings T

A

=25

o

C unless otherwise noted

Symbol Parameter Ratings Units

V

DSS

Drain-Source Voltage 30 V

V

GSS

Gate-Source Voltage

± 20

V

I

D

Drain Current – Continuous (Note 1) 80 A

– Pulsed (Note 1) 240

P

D

Total Power Dissipation @ T

C

= 25°C

68 W

Derate above 25°C

0.4

W/°C

T

J

, T

STG

Operating and Storage Junction Temperature Range –65 to +175

°C

Thermal Characteristics

R

θJC

Thermal Resistance, Junction-to-Case 2.2

°C/W

R

θJA

Thermal Resistance, Junction-to-Ambient 62.5

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDB7030L FDB7030L 13’’ 24mm 800 units

FDP7030L FDP7030L Tube n/a 45

FDP7030L / FDB7030L

FDP7030L / FDB7030L Rev E(W)

Electrical Characteristics T

A

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Drain-Source Avalanche Ratings (Note 1)

W

DSS

Single Pulse Drain-Source

Avalanche Energy

V

DD

= 15 V, I

D

= 80 A 114 mJ

I

AR

Maximum Drain-Source Avalanche

Current

80 A

Off Characteristics

BV

DSS

Drain–Source Breakdown Voltage

V

GS

= 0 V, I

D

= 250 µA

30 V

∆BVDSS

∆T

J

Breakdown Voltage Temperature

Coefficient

I

D

= 250 µA, Referenced to 25°C

24

mV/°C

I

DSS

Zero Gate Voltage Drain Current V

DS

= 24 V, V

GS

= 0 V 1

µA

I

GSS

Gate–Body Leakage

V

GS

= ± 20 V, V

DS

= 0 V ± 100

nA

On Characteristics (Note 2)

V

GS(th)

Gate Threshold Voltage

V

DS

= V

GS

, I

D

= 250 µA

1 1.9 3 V

∆VGS(th)

∆T

J

Gate Threshold Voltage

Temperature Coefficient

I

D

= 250 µA, Referenced to 25°C

–5

mV/°C

R

DS(on)

Static Drain–Source On–

Resistance

V

GS

= 10 V, I

D

= 40 A

V

GS

= 4.5 V, I

D

= 37 A

V

GS

= 10 V, I

D

= 40 A, T

J

=125°C

5.2

6.5

7.2

7

10

11

mΩ

I

D(on)

On–State Drain Current V

GS

= 10 V, V

DS

= 10 V 60 A

g

FS

Forward Transconductance V

DS

= 10V, I

D

= 40 A 115 S

Dynamic Characteristics

C

iss

Input Capacitance 2440 pF

C

oss

Output Capacitance 580 pF

C

rss

Reverse Transfer Capacitance

V

DS

= 15 V, V

GS

= 0 V,

f = 1.0 MHz

250 pF

R

G

Gate Resistance V

GS

= 15 mV, f = 1.0 MHz 1.4

Ω

Switching Characteristics (Note 2)

t

d(on)

Turn–On Delay Time 13 23 ns

t

r

Turn–On Rise Time 13 23 ns

t

d(off)

Turn–Off Delay Time 42 68 ns

t

f

Turn–Off Fall Time

V

DD

= 10V, I

D

= 1 A,

V

GS

= 10 V, R

GEN

= 6 Ω

15 27 ns

Q

g

Total Gate Charge 24 33 nC

Q

gs

Gate–Source Charge 7 nC

Q

gd

Gate–Drain Charge

V

DS

= 15 V, I

D

= 40 A,

V

GS

= 5 V

9 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain–Source Diode Forward Current 80 A

V

SD

Drain–Source Diode Forward

Voltage

V

GS

= 0 V, I

S

= 40 A (Note 1) 0.9 1.3 V

t

rr

Diode Reverse Recovery Time 34 nS

Q

rr

Diode Reverse Recovery Charge

I

F

= 40 A,

d

iF

/d

t

= 100 A/µs

24 nC

Notes:

1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDP7030L / FDB7030L

FDP7030L / FDB7030L Rev E(W)

Typical Characteristics

0

25

50

75

100

0 0.5 1 1.5 2

V

DS

, DRAIN-SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

3.0V

V

GS

= 10V

4.5V

3.5V

6.0V

4.0V

0.8

1

1.2

1.4

1.6

1.8

0 20 40 60 80 100

I

D

, DRAIN CURRENT (A)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

V

GS

= 3.5V

5.0V

6.0V

4.5V

4.0V

10V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.6

0.8

1

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

T

J

, JUNCTION TEMPERATURE (

o

C)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

I

D

= 40A

V

GS

=10V

0.005

0.009

0.013

0.017

0.021

2 4 6 8 10

V

GS

, GATE TO SOURCE VOLTAGE (V)

R

DS(ON)

, ON-RESISTANCE (OHM)

I

D

= 40A

T

A

= 125

o

C

T

A

= 25

o

C

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0

20

40

60

80

100

2 2.5 3 3.5 4

V

GS

, GATE TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

T

A

= 125

o

C

25

o

C

-55

o

C

V

DS

= 10V

0.001

0.01

0.1

1

10

100

1000

0 0.2 0.4 0.6 0.8 1 1.2 1.4

V

SD

, BODY DIODE FORWARD VOLTAGE (V)

I

S

, REVERSE DRAIN CURRENT (A)

T

A

= 125

o

C

25

o

C

-55

o

C

V

GS

= 0V

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDP7030L / FDB7030L

FDB7030L

FDB7030L

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