ICTE5 thru ICTE18C, 1N6373 thru 1N6386
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Vishay General Semiconductor
Revision: 22-Sep-16
1
Document Number: 88356
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TRANSZORB
®
Transient Voltage Suppressors
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C suffix (e.g. ICTE18C).
Electrical characteristics apply in both directions.
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case: Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant and commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ...)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the color band denotes
cathode end, no marking on bi-directional types
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T
A
= 25 °C per fig. 2
(2)
8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum
PRIMARY CHARACTERISTICS
V
WM
5.0 V to 18 V
V
BR
(uni-directional) 6.0 V to 21.2 V
V
BR
(bi-directional) 9.2 V to 21.2 V
P
PPM
1500 W
P
D
6.5 W
I
FSM
200 A
T
J
max. 175 °C
Polarity Uni-directional, bi-directional
Package 1.5KE
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Peak pulse power dissipation with a 10/1000 μs waveform
(1)
(fig. 1) P
PPM
1500 W
Peak pulse current with a 10/1000 μs waveform
(1)
(fig. 3) I
PPM
See next table A
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 8) P
D
6.5 W
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
(2)
I
FSM
200 A
Maximum instantaneous forward voltage at 100 A for uni-directional only V
F
3.5 V
Operating junction and storage temperature range T
J
, T
STG
-55 to +175 °C
