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SI7404DN-T1-GE3

P1-P3P4-P6
Vishay Siliconix
Si7404DN
Document Number: 71658
S11-2045-Rev. G, 17-Oct-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 30 V (D-S) Fast Switching MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
•TrenchFET
®
Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Li-lon Battery Protection
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()I
D
(A)
30
0.013 at V
GS
= 10 V
13.3
0.015 at V
GS
= 4.5 V
12.4
0.022 at V
GS
= 2.5 V
10.2
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
3.30 mm
3.30 mm
Bottom View
Ordering Information: Si7404DN-T1-E3 (Lead (Pb)-free)
Si7404DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
PowerPAK
®
1212-8
N-Channel MOSFET
G
D
S
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed cop-
per (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage V
DS
30
V
Gate-Source Voltage V
GS
± 12
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
13.3 8.5
A
T
A
= 70 °C 10.6 6.8
Pulsed Drain Current
I
DM
40
Single Avalanche Current
0.1 mH
I
AS
15
Single Avalanche Energy (Duty Cycle 1 %) E
AS
11 mJ
Continuous Source Current (Diode Conduction)
a
I
S
3.2 1.3 A
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
3.8 1.5
W
T
A
= 70 °C 2.0 0.8
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations
b,c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t 10 s
R
thJA
26 33
°C/W
Steady State 65 81
Maximum Junction-to-Case (Drain) Steady State R
thJC
1.9 2.4
www.vishay.com
2
Document Number: 71658
S11-2045-Rev. G, 17-Oct-11
Vishay Siliconix
Si7404DN
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
MOSFET SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
0.6 1.5 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 12 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
µA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
5
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
40 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 13.3 A
0.010 0.013
V
GS
= 4.5 V, I
D
=12.4 A
0.0125 0.015
V
GS
= 2.5 V, I
D
= 5 A
0.019 0.022
Forward Transconductance
a
g
fs
V
DS
= 5 V, I
D
= 13.3 A
50 S
Diode Forward Voltage
a
V
SD
I
S
= 3.2 A, V
GS
= 0 V
0.75 1.2 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 13.3 A
20 30
nCGate-Source Charge
Q
gs
5.8
Gate-Drain Charge
Q
gd
7.1
Tur n - O n D e l ay Time
t
d(on)
V
DD
= 15 V, R
L
= 15
I
D
1 A, V
GEN
= 4.5 V, R
G
= 6
27 40
ns
Rise Time
t
r
39 60
Turn-Off DelayTime
t
d(off)
64 100
Fall Time
t
f
33 50
Source-Drain Reverse Recovery
Time
t
rr
I
F
= 3.2 A, dI/dt = 100 A/µs
45 90
Output Characteristics
0
5
10
15
20
25
30
35
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
GS
= 10 thru 3 V
1, 1.5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
2.5 V
2 V
Transfer Characteristics
0
5
10
15
20
25
30
35
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
- 55 °C
T
C
= 125 °C
Document Number: 71658
S11-2045-Rev. G, 17-Oct-11
www.vishay.com
3
Vishay Siliconix
Si7404DN
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0.00
0.01
0.02
0.03
0.04
0.05
0 5 10 15 20 25 30 35 40
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 2.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 1 02 03 04 0 50
V
DS
= 15 V
I
D
= 13.3 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
SD
- Source-to-Drain Voltage (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 25 °C
50
10
1
- Source Current (A)I
S
T
J
= 150 °C
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
500
1000
1500
2000
2500
3000
0 5 10 15 20 25 30
C
rss
C
oss
C
iss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 2 5 5 0 7 5 100 125 150
V
GS
= 10 V
I
D
= 13.3 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
P1-P3P4-P6

SI7404DN-T1-GE3

Mfr. #:
Buy SI7404DN-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI7716ADN-T1-GE3
Lifecycle:
New from this manufacturer.
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