TSA884
PNP Silicon Planar High Voltage Transistor
Document Number:
DS_P0000262 1
Version: E15
PRODUCT SUMMARY
BV
-500V
BV
-500V
I
-150mA
V
-0.5V @ I
C
/ I
B
= -50mA / -10mA
Features
● Low Saturation Voltages
● Excellent gain characteristics specified up to -50mA
Ordering Information
Part No. Package Packing
TSA884CX RFG SOT-23 3Kpcs / 7” Reel
Note: “G” denotes for Halogen Free
Structure
● Epitaxial Planar Type
● PNP Silicon Transistor
Absolute Maximum Rating
(Ta = 25°C unless otherwise noted)
Parameter Symbol Limit Unit
Collector-Base Voltage V
-500 V
Collector-Emitter Voltage V
-500 V
Emitter-Base Voltage V
-5 V
Collector Current
DC
I
C
-150
mA
Pulse -500
Total Power Dissipation P
0.3 W
Operating Junction Temperature T
+150 °C
Operating Junction and Storage Temperature Range T
- 55 to +150 °C
Electrical Specifications
(Ta = 25°C unless otherwise noted)
Parameter Conditions
Symbol
Min Typ Max Unit
Collector-Base Breakdown Voltage I
= -100uA, I
= 0 BV
-500 -- -- V
Collector-Emitter Breakdown Voltage
I
= -10mA, I
= 0 BV
-500 -- -- V
Emitter-Base Breakdown Voltage I
= -100uA, I
= 0 BV
-5 -- -- V
Collector Cutoff Current V
= 120V, I
= 0 I
-- -- -100 nA
Emitter Cutoff Current V
= 6V, I
= 0 I
-- -- -100 nA
Collector-Emitter Saturation Voltage
I
= -20mA, I
= -2mA V
1
-- -- -0.2
V
I
= -50mA, I
= -10mA V
2
-- -0.5
Base-Emitter Saturation Voltage I
= -50mA, I
= -10mA V
-- -- -0.9 V
Base-Emitter on Voltage V
= -10V, I
= -50mA V
-- -- -0.9 V
DC Current Transfer Ratio
V
= -10V, I
= -1mA h
1 150 -- 300
V
= -10V, I
= -50mA h
2
80 -- 300
V
= -10V, I
= -100mA h
3
-- 15 --
Transition Frequency V
=10V, I
=-100mA f
-- 50 -- MHz
Output Capacitance V
= 20V, f=1MHz Cob -- -- 8 pF
Turn On Time V
CE
= -100V, I
C
= -50mA
I
B1
=-5mA, I
B2
=-10mA
Ton -- 110 -- nS
Turn Off Time Toff -- 1500 -- nS
1. Base
2. Emitter
3. Collector
