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VF20150S-E3/4W

P1-P3P4-P6
V20150S-E3, VF20150S-E3, VB20150S-E3, VI20150S-E3
www.vishay.com
Vishay General Semiconductor
Revision: 13-Dec-16
1
Document Number: 89059
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.55 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
I
F(AV)
20 A
V
RRM
150 V
I
FSM
160 A
V
F
at I
F
= 20 A 0.75 V
T
J
max. 150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variation Common cathode
PIN 1
PIN 2
PIN 3
K
PIN 1
PIN 2
PIN 3
PIN 1
PIN 2
CASE
PIN 3
TO-220AB
V20150S
1
2
3
TMBS
®
VI20150S
TO-262AA
VB20150S
NC
A
K
HEATSINK
NC
A
K
TO-263AB
1
K
2
3
VF20150S
ITO-220AB
1
2
3
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V20150S VF20150S VB20150S VI20150S UNIT
Max. repetitive peak reverse voltage V
RRM
150 V
Max. average forward rectified current (fig. 1) I
F(AV)
20 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
I
FSM
160 A
Non-repetitive avalanche energy
at T
J
= 25 °C, L = 60 mH
E
AS
150 mJ
Peak repetitive reverse current
at t
p
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C
I
RRM
0.5 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
V
AC
1500 V
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
V20150S-E3, VF20150S-E3, VB20150S-E3, VI20150S-E3
www.vishay.com
Vishay General Semiconductor
Revision: 13-Dec-16
2
Document Number: 89059
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width £ 40 ms
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP MAX UNIT
Breakdown voltage I
R
= 1.0 mA T
A
= 25 °C V
BR
150 (min.) - V
Instantaneous forward voltage
(1)
I
F
= 5 A
T
A
= 25 °C
V
F
0.69 -
V
I
F
= 10 A 0.84 -
I
F
= 20 A 1.15 1.43
I
F
= 5 A
T
A
= 125 °C
0.55 -
I
F
= 10 A 0.64 -
I
F
= 20 A 0.75 0.82
Reverse current
(2)
V
R
= 100 V
T
A
= 25 °C
I
R
2-μA
T
A
= 125 °C 2.5 - mA
V
R
= 150 V
T
A
= 25 °C - 250 μA
T
A
= 125 °C 5 25 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V20150S VF20150S VB20150S VI20150S UNIT
Typical thermal resistance R
JC
2.0 4.0 2.0 2.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB V20150S-E3/4W 1.88 4W 50/tube Tube
ITO-220AB VF20150S-E3/4W 1.75 4W 50/tube Tube
TO-263AB VB20150S-E3/4W 1.39 4W 50/tube Tube
TO-263AB VB20150S-E3/8W 1.39 8W 800/reel Tape and reel
TO-262AA VI20150S-E3/4W 1.45 4W 50/tube Tube
Case Temperature (°C)
Average Forward Rectified Current (A)
25
20
0
0 25 50 75 100 125 150 175
VF20150S
V(B,I)20150S
Resistive or Inductive Load
Mounted on Specific Heatsink
15
5
10
0
12
16
20
0 4 16 24
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
12
14
18
208
D = t
p
/T t
p
T
4
10
8
6
2
2142210 186
V20150S-E3, VF20150S-E3, VB20150S-E3, VI20150S-E3
www.vishay.com
Vishay General Semiconductor
Revision: 13-Dec-16
3
Document Number: 89059
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
Fig. 7 - Typical Transient Thermal Impedance
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
0 0.2 0.4 0.8 1.2 1.6
100
10
1
0.1
T
A
= 100 °C
T
A
= 25 °C
0.6 1.0
T
A
= 150 °C
T
A
= 125 °C
1.4
10 20 30 40
50
60 70 80 90 100
1
0.1
0.01
0.0001
100
10
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
0.001
1000
10 000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
100
100
10
1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
V(B,I)20150S
Junction to Case
10
0.1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
VF20150S
Junction to Case
1
P1-P3P4-P6

VF20150S-E3/4W

Mfr. #:
Buy VF20150S-E3/4W
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 20 Amp 150 Volt Single TrenchMOS
Lifecycle:
New from this manufacturer.
Delivery:
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