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PBSS302ND,115

P1-P3P4-P6P7-P9P10-P12P13-P15
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
NPN low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS302PD.
1.2 Features
n Ultra low collector-emitter saturation voltage V
CEsat
n 4 A continuous collector current capability I
C
n Up to 15 A peak current
n Very low collector-emitter saturation resistance
n High efficiency due to less heat generation
1.3 Applications
n Power management functions
n Charging circuits
n DC-to-DC conversion
n MOSFET gate driving
n Power switches (e.g. motors, fans)
n Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
[2] Pulse test: t
p
≤ 300 µs; δ≤0.02.
PBSS302ND
40 V, 4 A NPN low V
CEsat
(BISS) transistor
Rev. 02 — 18 February 2008 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
collector-emitter voltage open base - - 40 V
I
C
collector current
[1]
--4A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
--15A
R
CEsat
collector-emitter
saturation resistance
I
C
=6A;
I
B
= 600 mA
[2]
- 5575mΩ
PBSS302ND_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 18 February 2008 2 of 14
NXP Semiconductors
PBSS302ND
40 V, 4 A NPN low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Symbol
1 collector
2 collector
3 base
4 emitter
5 collector
6 collector
132
4
56
sym014
1, 2, 5, 6
4
3
Table 3. Ordering information
Type number Package
Name Description Version
PBSS302ND SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 4. Marking codes
Type number Marking code
PBSS302ND C7
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 60 V
V
CEO
collector-emitter voltage open base - 40 V
V
EBO
emitter-base voltage open collector - 5 V
I
C
collector current
[1]
-4A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
-15A
I
B
base current - 0.8 A
I
BM
peak base current single pulse;
t
p
≤ 1ms
-2A
P
tot
total power dissipation T
amb
≤ 25 °C
[2]
- 360 mW
[3]
- 600 mW
[4]
- 750 mW
[1]
- 1.1 W
[2][5]
- 2.5 W
P1-P3P4-P6P7-P9P10-P12P13-P15

PBSS302ND,115

Mfr. #:
Buy PBSS302ND,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT NPN 40V 4A LOW SAT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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