©2002 Fairchild Semiconductor Corporation Rev. B, November 2002
PN3642
Absolute Maximum Ratings*
T
A
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics
T
A
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0%
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 45 V
V
CBO
Collector-Base Voltage 60 V
V
EBO
Emitter-Base Voltage 5.0 V
I
C
Collector Current - Continuous 500 mA
T
J,
T
STG
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage * I
C
= 10mA, I
B
= 0 45 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 10µA, I
E
= 0 60 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 10µA, I
C
= 0 5.0 V
I
CES
Collector Cut-off Current V
CB
= 50V, I
E
= 0
V
CB
= 50V, I
E
= 0, T
A
= 65°C
50
1.0
nA
µA
On Characteristics
h
FE
DC Current Gain V
CE
= 10V, I
C
= 150mA
V
CE
= 10V, I
C
= 500mA
40
15
120
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 150mA, I
B
= 15mA 0.22 V
Small Signal Characteristics
C
ob
Output Capacitance V
CB
= 10V, f = 140KHz 8.0 pF
h
fe
Small Signal Current Gain I
C
= 50mA, V
CE
= 5.0V, f = 100MHz 1.5
G
pe
Amplifier Power Gain V
CE
= 15V, I
C
= 0, R
G
= 140Ω
f = 30MHz, R
L
= 260Ω
10 dB
η Collector Efficientcy V
CE
= 15V, I
C
= 0, R
G
= 140Ω
f = 30MHz, R
L
= 260Ω
60 %
PN3642
NPN General Purpose Amplifier
• This device is designed for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
1. Emitter 2. Base 3. Collector
TO-92
1
