BAS7002VH6327XTSA1

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P18 P19-P21 P22-P23

2007-09-19

1

BAS70.../BAS170W

Silicon Schottky Diode

• General-purpose diode for high-speed switching

• Circuit protection

• Voltage clamping

• High-level detecting and mixing

• BAS70-04S: For orientation in reel see

package information below

• Pb-free (RoHS compliant) package

1)

• Qualified according AEC Q101

BAS170W

BAS70-02L

BAS70-02W

BAS70-04

BAS70-04W

BAS70-04S BAS70-05

BAS70-05W

BAS70

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BAS70-06

BAS70-06W

BAS70-07

BAS70-07W

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1

Pb-containing package may be available upon special request

2007-09-19

2

BAS70.../BAS170W

Type Package Configuration L

S

(nH) Marking

BAS170W

BAS70

BAS70-02L

BAS70-02W

BAS70-04

BAS70-04S

BAS70-04W

BAS70-05

BAS70-05W

BAS70-06

BAS70-06W

BAS70-07

BAS70-07W

SOD323

SOT23

TSLP-2-1

SCD80

SOT23

SOT363

SOT323

SOT23

SOT323

SOT23

SOT323

SOT143

SOT343

single

single

single, leadless

single

series

dual series

series

common cathode

common cathode

common anode

common anode

parallel pair

parallel pair

1.8

1.8

0.4

0.6

1.8

1.6

1.4

1.8

1.4

1.8

1.4

2

1.8

white 7

73s

F

73

74s

74s

74s

75s

75s

76s

76s

77s

77s

Maximum Ratings at T

A

= 25°C, unless otherwise specified

Parameter

Symbol Value Unit

Diode reverse voltage V

R

70 V

Forward current I

F

70 mA

Non-repetitive peak surge forward current

t ≤ 10ms

I

FSM

100

Total power dissipation

BAS70, BAS70-07, T

S

≤ 72 °C

BAS70-02L, T

S

≤ 117 °C

BAS70-02W, T

S

≤ 107 °C

BAS70-04, BAS70-06, T

S

≤ 48 °C

BAS70-04S/W/-06W, BAS170W, T

S

≤ 97 °C

BAS70-05, T

S

≤ 22 °C

BAS70-05W, T

S

≤ 90 °C

BAS70-07W, T

S

≤ 114 °C

P

tot

250

250

250

250

250

250

250

250

mW

Junction temperature T

j

150 °C

Operating temperature range T

op

-55 ... 125

Storage temperature T

st

g

-55 ... 150

2007-09-19

3

BAS70.../BAS170W

Thermal Resistance

Parameter

Symbol Value Unit

Junction - soldering point

1)

BAS70, BAS70-07

BAS70-02L,

BAS70-02W

BAS70-04, BAS70-06

BAS70-04S/W, BAS70-06W

BAS70-05

BAS70-05W

BAS70-07W

BAS170W

R

thJS

≤ 310

≤ 130

≤ 170

≤ 410

≤ 210

≤ 510

≤ 240

≤ 145

≤ 190

K/W

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter

Symbol Values Unit

min. typ. max.

DC Characteristics

Breakdown voltage

I

(BR)

= 10 µA

V

(BR)

70 - - V

Reverse current

V

R

= 50 V

I

R

- - 0.1

µA

Forward voltage

I

F

= 1 mA

I

F

= 10 mA

I

F

= 15 mA

V

F

300

600

720

375

705

880

410

750

1000

mV

Forward voltage matching

2)

I

F

= 10 mA

∆ V

F

- - 20

1

For calculation of R

thJA

please refer to Application Note Thermal Resistance

2

∆V

F

is the difference between lowest and highest V

F

in a multiple diode component.

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BAS7002VH6327XTSA1

Mfr. #:

Buy BAS7002VH6327XTSA1

Manufacturer:

Infineon Technologies

Description:

Schottky Diodes & Rectifiers AF SCHOTTKY DIODES

Lifecycle:

New from this manufacturer.

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