ZLLS1000TA Datasheet ZLLS1000TA, ZLLS1000TC | P1-P3

ZLLS1000

Document Number DS32021 Rev. 6 - 2

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ZLLS1000

40V HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE

Features

• Low Equivalent on Resistance

• Extremely Low Leakage (typically 6μA @30V)

• High current capability (I

F

= 1.16A)

• Low V

F

, Fast Switching Schottky

• SOT23 Package

• ZLLS1000 Complements Low Temperature Equivalent

ZHCS1000

• Package Thermally Rated to +150°C

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23

• UL Flammability Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish

• Weight: 0.008 grams (Approximate)

Applications

• DC – DC Converters

• Strobes

• Mobile Phones

• Charging Circuits

• Motor Control

Ordering Information

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

ZLLS1000TA L10 7 8 3,000 units

ZLLS1000TC L10 13 8 10,000 units

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

Marking Information

L10 = Product type Marking Code

SOT23

Device Symbol

Pinout – Top View

L10

C

N/C

A

Cathode

Anode

Top View

ZLLS1000

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ZLLS1000

Maximum Ratings (@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Continuous Reverse Voltage

V

R

40 V

Forward Current

I

F

1.16 A

Peak Repetitive Forward Current

Rectangular Pulse Duty Cycle 50% 100μs pulse width

I

FPK

2.6 A

Non Repetitive Forward Current t≤100μs

t≤10ms

I

FSM

22

6.4

A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation @T

A

= +25°C Single Die Continuous

Single Die Measured at t<5 secs

P

D

0.8

1.18

W

Thermal Resistance Junction to Ambient (Note 4)

R

θJA

155 °C/W

Thermal Resistance Junction to Ambient (Note 5)

R

θJA

106 °C/W

Thermal Resistance Junction to Lead (Solder Point)

R

θJL

80 °C/W

Storage temperature range

T

STG

-55 to +150 °C

Junction temperature

T

J

150 °C

Notes: 4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

5. For a device mounted on FRB PCB measured at t<5secs.

Thermal Characteristics and Derating information

0 20 40 60 80 100 120 140 160

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

Derating Curve

Temperature (°C)

Max Power Dissipation (W)

100µ 1m 10m 100m 1 10 100 1k

0

50

100

150

T

amb

=25°C

Rectangular Pulse

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Thermal Resistance (°C/W)

Pulse Width (s)

ZLLS1000

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ZLLS1000

Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

Reverse breakdown voltage

V

(

BR

)

R

40 - - V

I

R

= 500µA

Forward voltage (Note 6)

V

F

-

320 355

mV

I

F

= 50mA

335 380

I

F

= 100mA

380 425

I

F

= 250mA

410 460

I

F

= 500mA

440 510

I

F

= 750mA

470 560

I

F

= 1A

530 660

I

F

= 1.5A

430 -

I

F

= 1000mA, T

A

= +100°C

Reverse current

I

R

-

5

500

20

-

μA

V

R

= 30V

V

R

= 30V, T

A

= +85°C

Diode capacitance

C

D

- 28 - pF

f = 1MHz, V

R

= 30V

Reverse recovery time

Reverse recovery charge

t

rr

Q

rr

-

5

350

-

ns

nC

Switched from I

F

= 500mA to V

R

= 5.5V

Measured @ I

R

50mA. di /dt = 500mA/ ns.

R

source

= 6Ω; R

load

= 10Ω

Notes: 6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle < 2%

ZLLS1000TA

ZLLS1000TA

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