QVE00034 Datasheet QVE00034 | P1-P3

4/14/03

PACKAGE DIMENSIONS

Page 1 of 5

PHOTOTRANSISTOR OPTICAL

INTERRUPTER SWITCH

QVE00034

SCHEMATIC

DESCRIPTION

The QVE00034 is a slotted optical switch designed for multipurpose non-contact sensing. It consists of a GaAs LED and a silicon

photo-transistor packaged into an injection molded housing and facing each other across a 0.315" (8.0 mm) gap. The housing is

featuring locating knobs for accurate mounting.

FEATURES

• No contact switching

• 8mm wide slot

• 0.5 mm aperture width

• Opaque black plastic housing

• Locating knobs on housing base for accurate mounting

•Transistor Output

PIN #1 (ANODE)

P

I

N

#

2

(C

AT

H

O

DE

)

PIN #3 (COLLECTOR)

P

I

N

#

4

(E

MIT

T

E

R

)

0.236 (6.00)

0.020 (0.50)

0.295 (7.50)

0.394 (10.00)

0.100 (2.54)

(2X) (TYP)

PINS

0.020 (0.51) (4X)

SQ. (TYP)

OPTICAL

C.L.

C

+

L

C

L

C

L

1

23

4

0.315 (8.00)

0.543 [13.79]

0.138 (3.51)

0.697 (17.70)

0.039 X 45°

CHAMFER (2X)

0.197 (5.00)

0.030 (0.76)

0.093 (2.36)

0.079 (2.00)

0.059 (1.50)

(2X)

0.333 (8.46)

N

O

TE

S:

1. Dimensions for all drawin

g

s are in inches (millimeters)

.

2. T

olerance of

T

±

.010

(

.25

)

on all non-nominal dimension

s

unless otherwise s

p

ecified.

E

D

2 3

14

4/14/03

Page 2 of 5

PHOTOTRANSISTOR OPTICAL

INTERRUPTER SWITCH

QVE00034

NOTES

1. Derate power dissipation linearly 1.67 mW/°C above 25°C.

2. RMA ﬂux is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron tip 1/16" (1.6mm) from housing.

ABSOLUTE MAXIMUM RATINGS

(T

A

= 25°C unless otherwise speciﬁed)

Parameter Symbol Rating Units

Operating Temperature

T

OPR

-55 to +100 °C

Storage Temperature

T

STG

-55 to +100 °C

Soldering Temperature (Iron)

(2,3,4)

T

SOL-I

240 for 5 sec °C

Soldering Temperature (Flow)

(2,3)

T

SOL-F

260 for 10 sec °C

EMITTER

Continuous Forward Current

I

F

50 mA

Reverse Voltage

V

R

6V

Power Dissipation

(1)

P

D

100 mW

SENSOR

Collector-Emitter Voltage

V

CEO

30 V

Emitter-Collector Voltage

V

ECO

4.5 V

Collector Current

I

C

20 mA

Power Dissipation

(1)

P

D

150 mW

ELECTRICAL/OPTICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise speciﬁed)

PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS

EMITTER

Forward Voltage

I

F

= 20 mA V

F

— 1.2 1.5 V

Reverse Current

V

R

= 4 V I

R

——10µA

Peak Emission Wavelength

I

F

= 20 mA

λ

PE

— 940 — nm

SENSOR

Dark Current

V

CE

= 10 V, I

F

= 0 mA

I

D

——200 nA

V

CE

= 2.5 V, I

F

= 0 mA, T

A

= -40°C to +85°C

—— 3µA

COUPLED

Collector Current

I

F

= 20 mA, V

CE

= 10 V I

C(ON)

0.5 — 14 mA

Collector Emitter Saturation

Voltage

I

F

= 20 mA, I

C

= 0.1 mA

T

A

= -40°C to +85°C

V

CE (SAT)

——0.4 V

Rise Time

V

CC

= 5 V, R

L

= 100

Ω

I

C

= 5 µA

t

r

—4—

µs

Fall Time

t

f

—4—

4/14/03

Page 3 of 5

PHOTOTRANSISTOR OPTICAL

INTERRUPTER SWITCH

QVE00034

TYPICAL PERFORMANCE CURVES

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

123456789101112

I

CE

(mA)

T

A

= 25˚C

I

F

= 40 mA

I

F

= 30 mA

I

F

= 20 mA

I

F

= 10 mA

-50 -25 0

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.9

TEMP(C)V

CE

(V)

V

CE

NORMALIZED

25 50 75 100

I

F

= 10 mA, I

C

= 0.05 mA

I

F

= 30 mA, I

C

= 0.15 mA

Normalized to

I

F

= 20 mA, I

C

= 0.1 mA, T

A

= 25˚C

I

F

= 20 mA, I

C

= 0.1 mA

Fig. 3 Collector-Emitter Voltage vs. Collector Current

Fig. 4 Collector-Emitter Voltage vs. Temperature

Fig. 1 Collector Current vs. Shield Distance

Fig. 2 Collector Current vs. Shield Distance

d1-Shield Distance(mm)

02468

I

c(on)

-Normalized Collector Current

0.0

0.2

0.4

0.6

0.8

1.0

T

A

=25°C

I

F

=20mA

V

CE

=5V

0

Black Shield

d1

Normalized to

value with shield

removed

d2-Shield Distance(mm)

0123456

I

c(on)

-Normalized Collector Current

0.0

0.2

0.4

0.6

0.8

1.0

T

A

=25°C

I

F

=20mA

V

CE

=5V

+

E

D

+

d2

Black Shield

0

Normalized to

value with shield

removed

QVE00034

QVE00034

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