TYPICAL CHARACTERISTICS
Output Characteristics
V
DS
- Drain Source Voltage (Volts)
246810
010 20304050
Saturation Characteristics
V
DS
- Drain Source Voltage (Volts)
I
D
- Drain Current (Amps)
I
D
-
D
rain Cur
r
e
nt
(
Amps)
0
4
2
6
10
8
10V
8V
9V
7V
5V
4V
6V
4.5V
3.5V
V
GS=
20V
12V
14V
16V
5V
4V
10V
8V
6V
9V
7V
4.5V
3.5V
V
GS=
20V
12V
14V
16V
0
4
2
6
10
8
Output Characteristics
V
DS
- Drain Source Voltage (Volts)
246810
010 20304050
Saturation Characteristics
V
DS
- Drain Source Voltage (Volts)
I
D
- Drain Current (Amps)
I
D
-
D
rain Cur
r
e
nt
(
Amps)
0
4
2
6
10
8
10V
8V
9V
7V
5V
4V
6V
4.5V
3.5V
V
GS=
20V
12V
14V
16V
5V
4V
10V
8V
6V
9V
7V
4.5V
3.5V
V
GS=
20V
12V
14V
16V
0
4
2
6
10
8
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
60 V I
D
=1mA, V
GS
=0V
Gate-Source Threshold Voltage V
GS(th)
1.3 3 V I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
100 nA
V
GS
=± 20V, V
DS
=0V
Zero Gate Voltage Drain Current I
DSS
10
100
µA
µA
V
DS
=60V, V
GS
=0
V
DS
=48V, V
GS
=0V, T=125°C(2)
On-State Drain Current(1) I
D(on)
3AV
DS
=25V, V
GS
=10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
1
1.5
Ω
Ω
V
GS
=10V,I
D
=1.5A
V
GS
=5V,I
D
=0.5A
Forward Transconductance(1)(2) g
fs
300 mS V
DS
=25V,I
D
=1.5A
Input Capacitance (2) C
iss
100 pF
Common Source Output
Capacitance (2)
C
oss
60 pF V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance (2) C
rss
20 pF
Turn-On Delay Time (2)(3) t
d(on)
8ns
V
DD
≈25V, I
D
=1.5A,V
GEN
=10V
Rise Time (2)(3) t
r
12 ns
Turn-Off Delay Time (2)(3) t
d(off)
12 ns
Fall Time (2)(3) t
f
15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse
generator
ZDM4206N
3 - 318
Transfer Characteristics
V
DS-
Drain Source
Voltage (Volts)
Voltage Saturation Characteristics
V
GS-
Gate Source Voltage
(Volts)
V
GS-
Gate Source
Voltage (Volts)
0246810
6
4
0
2
I
D
-
D
r
a
i
n
C
u
r
r
e
nt (Amps
)
V
DS=
10V
0
10
6
2
4
8
02 4 6 8 10
I
D=
3A
1.5A
0.5A
On-resistance v drain current
I
D-
Drain Current
(Amps)
R
DS(on)
-Drain Source On Resistance
(Ω)
0.1
1.0
10
4.5V
6V
V
GS
=3.5V
8V
10V
0.1
1.0
Normalised R
DS(on)
and V
GS(th)
v Temperature
T
j
-Junction Temperature (°C)
Normalised R
DS(
o
n)
a
n
d V
GS(th)
-50
-25 0 25 50 75
100
150
125 175 200
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n
-
S
o
u
rc
e R
es
i
s
ta
n
c
e R
D
S(o
n
)
Ga
te
T
h
res
h
o
l
d
V
o
l
t
a
g
e
V
G
S(
TH
)
I
D=
1.5A
V
GS=
10V
I
D=
1mA
V
GS=
V
DS
2.6
225
20V
14V
Transfer Characteristics
V
DS-
Drain Source
Voltage (Volts)
Voltage Saturation Characteristics
V
GS-
Gate Source Voltage
(Volts)
V
GS-
Gate Source
Voltage (Volts)
0246810
6
4
0
2
I
D
-
D
r
a
i
n
C
u
r
r
e
nt (Amps
)
V
DS=
10V
0
10
6
2
4
8
02 4 6 8 10
I
D=
3A
1.5A
0.5A
On-resistance v drain current
I
D-
Drain Current
(Amps)
0.1
1.0
10
4.5V
6V
V
GS
=3.5V
8V
10V
0.1
10
Normalised R
DS(on)
and V
GS(th)
v Temperature
T
j
-Junction Temperature (°C)
Normalised R
DS(
o
n)
a
n
d V
GS(th)
-50
-25 0 25 50 75
100
150
125 175 200 225
20V
14V
Transconductance v drain current
I
D
- Drain Current (Amps)
g
fs
-T
r
ans
c
o
n
ducta
n
c
e
(
m
S)
g
fs
-T
ransconductance (mS)
Transconductance v gate-source voltage
V
GS
-Gate Source Voltage (Volts)
012345678910
V
DS=
10V
0
300
200
100
400
800
700
600
500
900
1000
012345678910
V
DS=
10V
0
300
200
100
400
800
700
600
500
900
1000
TYPICAL CHARACTERISTICS
ZDM4206N
3 - 319
