2DD2678-13 Datasheet 2DD2678-13 | P1-P3

2DD2678

Document number: DS31637 Rev. 3 - 2

1 of 4

www.diodes.com

April 2010

2DD2678

LOW V

CE(SAT)

NPN SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Ideally Suited for Automated Assembly Processes

• Ideal for Medium Power Switching or Amplification Applications

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

Mechanical Data

• Case: SOT89-3L

• Case Material: Molded Plastic, "Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Finish — Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.072 grams (approximate)

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

V

CBO

15 V

Collector-Emitter Voltage

V

CEO

12 V

Emitter-Base Voltage

V

EBO

6 V

Peak Pulse Current

I

CM

6 A

Continuous Collector Current

I

C

3 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3) @ T

A

= 25°C P

D

0.9 W

Thermal Resistance, Junction to Ambient Air (Note 3) @ T

A

= 25°C

R

θ

JA

139 °C/W

Power Dissipation (Note 4) @ T

A

= 25°C P

D

2 W

Thermal Resistance, Junction to Ambient Air (Note 4) @ T

A

= 25°C

R

θ

JA

62.5 °C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150 °C

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Conditions

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

V

(

BR

)

CBO

15

⎯ ⎯

V

I

C

= 10μA, I

E

= 0

Collector-Emitter Breakdown Voltage (Note 5)

V

(

BR

)

CEO

12

⎯ ⎯

V

I

C

= 1mA, I

B

= 0

Emitter-Base Breakdown Voltage

V

(

BR

)

EBO

6

⎯ ⎯

V

I

E

= 10μA, I

C

= 0

Collector Cut-Off Current

I

CBO

⎯ ⎯

0.1

μA

V

CB

= 15V, I

E

= 0

Emitter Cut-Off Current

I

EBO

⎯ ⎯

0.1

μA

V

EB

= 6V, I

C

= 0

ON CHARACTERISTICS (Note 5)

Collector-Emitter Saturation Voltage

V

CE

(

SAT

)

⎯

90 250 mV

I

C

= 1.5A, I

B

= 30mA

DC Current Gain

h

FE

270

⎯

680

⎯ V

CE

= 2V, I

C

= 500mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

C

obo

⎯

26

⎯

pF

V

CB

= 10V, I

E

= 0,

f = 1MHz

Current Gain-Bandwidth Product

f

T

⎯

170

⎯

MHz

V

CE

= 2V, I

C

= 100mA,

f = 100MHz

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

4. Device mounted on FR-4 PCB with 1 inch

2

copper pad layout.

5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

Top View

Device Schematic

Pin Out Configuration

4

3

2

1

C

B

E

T

O

P

V

I

E

W

3

1

2,4

C

O

L

E

C

T

O

R

E

M

I

T

E

R

B

A

S

E

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2DD2678

Document number: DS31637 Rev. 3 - 2

2 of 4

www.diodes.com

April 2010

2DD2678

0

0.4

0.8

25 50

75

100 125

150

P

,

P

O

WE

R

DISSI

P

A

T

I

O

N

(mW)

D

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Power Dissipation vs.

Ambient Temperature

A

1.2

1.6

2.0

0

0.5

1.0

1.5

2.0

2.5

01 2345

V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage

I,

C

O

LLE

C

T

O

R

C

U

R

E

N

T

(A)

C

I = 1mA

B

I = 2mA

B

I = 3mA

B

I = 4mA

B

I = 5mA

B

10

100

1,000

0.1 1 10 100 1,000 10,000

I , COLLECTOR CURRENT (mA)

C

Fig. 3 Typical DC Current Gain vs. Collector Current

h, D

C

U

R

EN

T

G

AIN

FE

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

V = 2V

CE

0.1 1 10 100 1,000 10,000

I , COLLECTOR CURRENT (mA)

C

Fig. 4 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

0.001

0.01

0.1

1

V,

C

O

LLE

C

T

O

R

-EMI

T

E

R

SATURATION

CE(SAT)

VOLTAGE (V)

I/I = 20

CB

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = 150°C

A

1 10 100 1,000 10,000

I , COLLECTOR CURRENT (mA)

C

Fig. 5 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

0

0.2

0.4

0.6

0.8

1.0

1.

2

V , BASE-EMI

T

E

R

T

U

R

N

-

O

N

V

O

L

T

A

G

E (V)

BE(ON)

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

V = 2V

CE

1 10 100 1,000 10,000

I , COLLECTOR CURRENT (mA)

C

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current

0.2

0.4

0.6

0.8

1.0

1.2

V , BASE-EMI

T

E

R

SA

T

U

R

A

T

I

O

N V

O

L

T

A

G

E (V)

BE(SAT)

0

T = 150°C

A

T = 25°C

A

T = -55°C

A

T = 85°C

A

I = 20

CB

/I

2DD2678

Document number: DS31637 Rev. 3 - 2

3 of 4

www.diodes.com

April 2010

2DD2678

0.1 1 10 100

V , REVERSE VOLTAGE (V)

R

Fig. 7 Typical Capacitance Characteristics

10

100

1,000

C

A

P

A

C

I

T

A

N

C

E (p

F

)

C

ibo

C

obo

f = 1MHz

0102030405060708090100

I , COLLECTOR CURRENT (mA)

C

Fig. 8 Typical Gain-Bandwidth Product

vs. Collector Current

1

10

100

1,000

f,

G

AI

N

-BA

N

DWID

T

H

P

R

O

D

U

C

T

(M

H

z)

T

V = 2V

f = 100MHz

CE

Ordering Information (Note 6)

Part Number Case Packaging

2DD2678-13 SOT89-3L 2500/Tape & Reel

Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Package Outline Dimensions

SOT89-3L

Dim Min Max

A 1.40 1.60

B 0.44 0.62

B1 0.35 0.54

C 0.35 0.43

D 4.40 4.60

D1 1.52 1.83

E 2.29 2.60

e 1.50 Typ

e1 3.00 Typ

H 3.94 4.25

L 0.89 1.20

All Dimensions in mm

2678 = Product Type Marking Code

YWW = Date Code Marking

Y = Last digit of year (ex: 8 = 2008)

WW = Week code (01 – 53)

2678

YWW

e

D

H

L

A

C

E

8

°

(

4

X

)

B1

B

D1

R

0

.

2

0

e1

2DD2678-13

2DD2678-13

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