2003 Aug 20 3
NXP Semiconductors Product data sheet
Low V
F
MEGA Schottky barrier diode
PMEG2010EV
THERMAL CHARACTERISTICS
Notes
1. Refer to SOT666 standard mounting conditions.
2. Mounted on printed circuit-board, 1 cm
2
copper area.
Soldering
The only recommended soldering method is reflow soldering.
ELECTRICAL CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Notes
1. Only valid if pins 1, 2, 5 and 6 are soldered on a 1 cm
2
copper solder land.
2. Pulse test: t
p
= 300 μs; δ = 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 405 K/W
note 2 215 K/W
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
continuous forward voltage I
F
= 10 mA 240 270 mV
I
F
= 100 mA 300 350 mV
I
F
= 1 000 mA; note 1; see Fig.2 480 550 mV
I
R
reverse current V
R
= 5 V; note 2 5 10 μA
V
R
= 8 V; note 2 7 20 μA
V
R
= 15 V; note 2; see Fig.3 10 50 μA
C
d
diode capacitance V
R
= 5 V; f = 1 MHz; see Fig.4 19 25 pF
