SQM120N03-1m5L_GE3

www.vishay.com Document Number: 67333
4 S11-1098-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM120N03-1m5L
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Gate Charge
Source Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
0
2
4
6
8
10
0 40 80 120 160 200
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
I
D
= 120 A
V
DS
= 15 V
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 25 °C
T
J
= 150 °C
-1.5
-1.1
-0.7
-0.3
0.1
0.5
- 50 - 25 0 25 50 75 100 125 150 175
V
GS(th)
Variance (V)
T
J
-Temperature (°C)
I
D
= 250 μA
I
D
= 5 mA
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150 175
R
DS(on)
-On-Resistance
(Normalized)
T
J
- Junction Temperature (°C)
I
D
= 30 A
V
GS
= 4.5 V
V
GS
= 10 V
0.000
0.001
0.002
0.003
0.004
0.005
0246810
R
DS(on)
-On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
30
32
34
36
38
40
- 50 - 25 0 25 50 75 100 125 150 175
V
DS
-Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
I
D
= 1 mA
Document Number: 67333 www.vishay.com
S11-1098-Rev. A, 13-Jun-11 5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM120N03-1m5L
Vishay Siliconix
THERMAL RATINGS (T
A
= 25 °C, unless otherwise noted)
Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
Limited by R
DS(on)
*
1 ms
I
DM
Limited
T
C
= 25 °C
Single Pulse
BVDSS Limited
10 ms
100 μs
100 ms, 1 s, 10 s, DC
I
D
Limited
10
-4
10
-3
10
-2
10
-1
1 10 100 1000
1
0.01
0.001
0.1
0.0001
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
www.vishay.com Document Number: 67333
6 S11-1098-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SQM120N03-1m5L
Vishay Siliconix
THERMAL RATINGS (T
A
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67333
.
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
t n e i s n a r T e
v
i t c e f f E d e z i l a
m
r o N
e c
n a
d e p m I l a m
r
e h T
1
0.2
0.1
Duty Cycle = 0.5
Single Pulse
0.02
0.05

SQM120N03-1m5L_GE3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V 120A 375W AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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