OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IRFI4410ZGPBF

P1-P3P4-P6P7-P8
05/18/11
www.irf.com 1
HEXFET
®
Power MOSFET
IRFI4410ZGPbF
S
D
G
GDS
Gate Drain Source
D
S
D
G
TO-220AB Full-Pak
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l Halogen-Free
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
V
DSS
100V
R
DS(on)
typ.
7.9m
max.
9.3m
I
D
43A
Absolute Maximum Ratings
Parameter
Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage V
E
AS (Thermally limited)
Single Pulse Avalanche Energy
mJ
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ. Max. Units
R
θJC
Junction-to-Case
––– 3.2 °C/W
R
θJA
Junction-to-Ambient
––– 65
-55 to + 175
0.3
10lb in (1.1N m)
300
±30
310
47
Max.
43
30
170
PD - 96372
IRFI4410ZGPbF
2 www.irf.com
S
D
G
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.91mH
R
G
= 25Ω, I
AS
= 26A, V
GS
=10V. Part not recommended for use
above this value.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
R
θ
is measured at T
J
approximately 90°C
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 95 –––
mV/°C
R
DS( on)
Static Drain-to-Source On-Resistance ––– 7.9 9.3 m
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 μA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
R
G(in t)
Internal Gate Resistance ––– 0.9 –––
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 80 ––– ––– S
Q
g
Total Gate Charge ––– 81 110 nC
Q
gs
Gate-to-Source Charge ––– 18 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 23 –––
t
d(on)
Turn-On Delay Time ––– 15 ––– ns
t
r
Rise Time ––– 27 –––
t
d(off)
Turn-Off Delay Time ––– 43 –––
t
f
Fall Time ––– 30 –––
C
iss
Input Capacitance ––– 4910 ––– pF
C
oss
Output Capacitance ––– 330 –––
C
rs s
Reverse Transfer Capacitance –––
150
–––
C
oss
eff. (ER)
Effective Output Capacitance (Energy Related)
––– 420 –––
C
oss
eff. (TR) Effective Output Capacitance (Time Related) ––– 680 –––
Diode Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current ––– –––
43
A
(Body Diode)
I
SM
Pulsed Source Current ––– ––– 170 A
(Body Diode)
V
SD
D iode Forw ar d Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 47 71 ns T
J
= 25°C V
R
= 85V,
–––
54
81
T
J
= 125°C
I
F
= 26A
Q
rr
Reverse Recovery Charge ––– 110 160 nC T
J
= 25°C
di/dt = 100A/μs
–––
140
210
T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 2.5 ––– A T
J
= 25°C
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
Conditions
V
DS
= 50V, I
D
= 26A
I
D
= 26A
V
GS
= 10V
V
DD
= 65V
I
D
= 26A
R
G
= 2.7
V
DS
= V
GS
, I
D
= 150μA
V
DS
= 100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
V
DS
= 50V
V
GS
= 20V
V
GS
= -20V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 5mA
V
GS
= 10V, I
D
= 26A
p-n junction diode.
T
J
= 25°C, I
S
= 26A, V
GS
= 0V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V , See Fig.11
V
GS
= 0V, V
DS
= 0V to 80V
Conditions
MOSFET symbol
showing the
integral reverse
IRFI4410ZGPbF
www.irf.com 3
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM 4.5V
≤
60μs PULSE WIDTH
Tj = 25°C
4.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM 4.5V
≤60μs PULSE WIDTH
Tj = 175°C
4.5V
2 3 4 5 6
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 50V
≤60μs PULSE WIDTH
1 10 100
V
DS
, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 20 40 60 80 100 120
Q
G
Total Gate Charge (nC)
0
4
8
12
16
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
I
D
= 26A
-60 -40 -20 0 20 40 60 80 100120140160180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 26A
V
GS
= 10V
P1-P3P4-P6P7-P8

IRFI4410ZGPBF

Mfr. #:
Buy IRFI4410ZGPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 100V 97A 9.3mOhm 81nC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet