SiHG33N60E
www.vishay.com
Vishay Siliconix
S16-0799-Rev. F, 02-May-16
1
Document Number: 91522
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
E Series Power MOSFET
FEATURES
• Low figure-of-merit (FOM): R
on
x Q
g
• Low input capacitance (C
iss
)
• Reduced switching and conduction losses
• Ultra low gate charge (Q
g
)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 28.2 mH, R
g
= 25 , I
AS
= 7.5 A.
c. 1.6 mm from case.
d. I
SD
I
D
, dI/dt = 100 A/μs, starting T
J
= 25 °C.
PRODUCT SUMMARY
V
DS
(V) at T
J
max. 650
R
DS(on)
max. () at 25 °C V
GS
= 10 V 0.099
Q
g
max. (nC) 150
Q
gs
(nC) 24
Q
gd
(nC) 42
Configuration Single
Available
ORDERING INFORMATION
Package TO-247AC
Lead (Pb)-free SiHG33N60E-E3
Lead (Pb)-free and Halogen-free SiHG33N60E-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
600
V
Gate-Source Voltage V
GS
± 30
Continuous Drain Current (T
J
= 150 °C) V
GS
at 10 V
T
C
= 25 °C
I
D
33
AT
C
= 100 °C 21
Pulsed Drain Current
a
I
DM
88
Linear Derating Factor 2.2 W/°C
Single Pulse Avalanche Energy
b
E
AS
793 mJ
Maximum Power Dissipation P
D
278 W
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150 °C
Drain-Source Voltage Slope V
DS
= 0 V to 80 % V
DS
dV/dt
70
V/ns
Reverse Diode dV/dt
d
12
Soldering Recommendations (Peak temperature)
c
for 10 s 300 °C