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TSH300IDT
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
El
ect
ric
al C
har
ac
teri
st
ics
TSH3
00
10/18
Figu
re 3
1
.
V
io
vs.
tem
perature
Figure 32.
I
bias
vs. temperatu
re
Figure 3
3.
Supply
current
vs. temp
eratu
re
Figure 3
4.
A
VD vs.
tem
perature
Figu
re 3
5
.
Out
pu
t rai
ls v
s
. t
empe
r
ature
Figur
e 3
6
.
I
out
vs. temperatu
re
-40
-20
0
20
40
60
80
100
120
0,0
0,1
0,2
0,3
0,4
0,5
0,6
0,7
0,8
0,9
1,0
Vcc=+5V
Temperature (°C)
V
IO
(m
V
)
-40
-20
0
20
40
60
80
100
120
-40
-30
-20
-10
0
10
20
30
40
Vcc=+5V
I
BI
AS
(
µ
A)
Ib(+
)
Ib(-)
Temperat
ure (°C)
-40
-
20
0
20
40
60
80
100
120
-30
-25
-20
-15
-10
-5
0
5
10
15
20
Vcc=+5
V
no Lo
ad
In
+/In-
to G
N
D
Icc(
+)
Icc(
-)
Tem
perature (°C)
I
CC
(mA)
-
4
0
-
2
0
0
2
04
06
0
8
0
1
0
0
1
2
0
60
62
64
66
68
70
72
74
76
78
80
Vcc=+
5V
Temperat
ure (°C)
A
VD
(d
B)
-
4
0
-
2
0
0
2
0
4
06
08
0
-5
-4
-3
-2
-1
0
1
2
Vcc=+5V
Load=
1
00
Ω
V
OL
V
OH
V
OH & OL
(V
)
Temperature (°C)
-4
0
-
20
0
20
4
0
6
0
80
100
12
0
-160
-140
-120
-100
-80
-60
-40
-20
0
20
40
60
80
100
Vcc=+5V
O
utp
ut: s
hor
t-ci
rcui
t
Iout
(mA
)
Is
ource
Is
ink
Temperat
ure (°C)
El
ect
ric
al C
har
ac
teri
st
ics
TSH3
00
11/18
Figure 3
7.
CMR
vs. tem
peratu
re
Figure 3
8.
Bandwidth vs.
temp
erature
Figu
re 3
9.
S
lew-ra
te
vs.
te
mpe
ra
ture
Fi
gur
e 4
0.
I
sin
k
Figu
re 4
1
.
SV
R vs
.
tem
per
at
ure
Figur
e 4
2
.
I
sou
rce
-4
0
-
20
0
20
4
0
6
0
80
100
12
0
80
82
84
86
88
90
92
94
96
98
100
Vcc=+5V
CMR (dB)
Temperat
ure (°C)
-4
0
-
20
0
20
4
0
6
0
80
100
12
0
20
25
30
35
40
45
50
55
60
65
70
Vcc=+5V
Gain=+20
Load
=
100
Ω
Bw (MHz)
Temperat
ure (°C)
-40
-20
0
20
40
60
80
1
00
120
180
200
220
240
260
280
SR-
SR+
Vcc=+5V
Gain=+20
Load
=
100
Ω
Temperature (°C)
Slew R
ate (V/µs)
-2,0
-1,5
-1,0
-0,
5
0,0
0
10
20
30
40
50
60
70
80
90
+
_
R
G
+2.5V
-2
.
5
V
V
OL
wi
thout
load
V
Isink
Amplif
ier in
open
loop
w
ithout l
oad
-1V
+
_
R
G
+2.5V
-2
.
5
V
V
OL
wi
thout
load
V
Isink
Amplif
ier in
open
loop
w
ithout l
oad
-1V
Isi
nk
(mA)
Vout
(V)
-40
-
20
0
20
40
60
80
1
00
120
50
55
60
65
70
75
80
85
90
Vcc
=+5
V
SVR
(dB)
Te
mper
ature
(°
C)
0,0
0,5
1,
0
1,5
2,
0
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
+
_
R
G
+2.
5V
-2
.
5
V
V
OH
wit
hou
t l
oa
d
V
Isour
ce
Ampl
ifie
r i
n op
en
loop wit
hout load
+1V
+
_
R
G
+2.
5V
-2
.
5
V
V
OH
wit
hou
t l
oa
d
V
Isour
ce
Ampl
ifie
r i
n op
en
loop wit
hout load
+1V
Isou
rce
(mA)
Vout
(V
)
Power Supply
Consideration
s
TSH300
12/18
3
P
owe
r Sup
ply Cons
ider
ation
s
C
orrect
p
ower
supp
ly b
ypa
ssing is v
er
y impor
tant f
or optimizing perf
or
m
ance in high-frequen
cy
ranges. B
ypass c
apacitors shou
ld
be
placed
as clo
se as
possibl
e
t
o the
IC pi
ns t
o imp
rov
e
high-fre
quency bypassing. A c
apacitor greater than 1
µ
F is n
ecessar
y to m
inimize the distor
tion.
For better quality b
ypa
ssing, a capa
citor of 10nF can be added
using th
e same implem
entation
con
ditions. Bypass
ca
pacitors must b
e in
cor
porated
f
o
r both
the
neg
ativ
e
and
the
positive
supply
.
Figur
e 43
.
Circuit for power s
upply
b
yp
assing
+
-V
CC
+V
CC
10
m
icr
oF
+
10
nF
10m
icr
oF
+
10nF
-
+
-V
CC
+V
CC
10
m
icr
oF
+
10
nF
10m
icr
oF
+
10nF
-
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
TSH300IDT
Mfr. #:
Buy TSH300IDT
Manufacturer:
STMicroelectronics
Description:
Operational Amplifiers - Op Amps Ultra Low Noise High Speed 200MHz
Lifecycle:
New from this manufacturer.
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