Characteristics T1610H
2/9 DocID024630 Rev 1
1 Characteristics
Table 2. Absolute maximum rating (T
j
= 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
I
T(RMS)
On-state rms current (180° conduction angle) T
c
= 133 °C 16 A
I
TSM
Non repetitive surge peak on-state current, T
j
initial = 25 °C
t
p
= 16.7 ms 168
A
t
p
= 20ms 160
I
²
tI
²
t Value for fusing t
p
= 10 ms 169 A
²
s
dI/dt Critical rate of rise of on-state current, I
G
= 2 x I
GT
, tr 100 ns F = 60 Hz 100 A/µs
V
DRM
,
V
RRM
Repetitive peak off-state voltage T
j
= 150 °C 600 V
V
DSM
,
V
RSM
Non repetitive peak off-state voltage t
p
= 10 ms 700 V
I
GM
Peak gate current t
p
= 20 µs 4 A
P
GM
Peak gate power dissipation t
p
= 20 µs 10 W
P
G(AV)
Average gate power dissipation 1 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
-40 to +150 °C
T
L
Lead temperature for soldering during 10 s 260 °C
Table 3. Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol Test conditions Quadrant Value Unit
I
GT
V
D
= 12 V, R
L
= 33 I - II - III
MIN. 0.5 mA
MAX. 10 mA
V
GT
V
D
= 12 V, RL = 33 I - II - III MAX. 1.3 V
V
GD
V
D
= V
DRM
, R
L
= 3.3 k T
j
= 150 °C I - II - III MIN. 0.2 V
I
H
I
T
= 500 mA, gate open MAX. 15 mA
I
L
I
G
= 1.2 I
GT
I - II - III MAX. 30 mA
dV/dt V
D
= 67% x V
DRM
, V
RRM
, gate open T
j
= 150 °C MIN. 100 V/µs
(dl/dt)c
(dV/dt)c = 0.1 V/µs
T
j
= 150 °C
MIN.
8.5
A/ms
(dV/dt)c = 10 V/µs 3
t
gt
I
TM
= 13 A, V
D
= 400 V, I
G
= 100 mA,
dI
G
/dt = 100 mA/µs, R
L
= 30
TYP. 2 µs
