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L6569
L6569A
June 2000
This is preliminary information on a new product now in development. Details are subject to change without notice.
HIGH VOLTAGE RAIL UP TO 600V
BCD OFF LINE TECHNOLOGY
INTERNAL BOOTSTRAP DIODE
STRUCTURE
15.6V ZENER CLAMP ON V
S
DRIVER CURRENT CAPABILITY:
- SINK CURRENT = 270mA
- SOURCE CURRENT = 170mA
VERY LOW START UP CURRENT: 150
µ
A
UNDER VOLTAGE LOCKOUT WITH
HYSTERESIS
PROGRAMMABLE OSCILLATOR
FREQUENCY
DEAD TIME 1.25
µ
s
dV/dt IMMUNITY UP TO ±50V/ns
ESD PROTECTION
DESCRIPTION
The device is a high voltage half bridge driver with
built in oscillator. The frequency of the oscillator can
be programmed using external resistor and capaci-
tor. The internal circuitry of the device allows it to be
driven also by external logic signal.
The output drivers are designed to drive external n-
channel power MOSFET and IGBT. The internal log-
ic assures a dead time [typ. 1.25
µ
s] to avoid cross-
conduction of the power devices.
Two version are available: L6569 and L6569A. They
differ in the low voltage gate driver start up sequence.
Minidip SO8
ORDERING NUMBERS:
L6569 L6569D
L6569A L6569AD
HIGH VOLTAGE HALF BRIDGE
DRIVER WITH OSCILLATOR
BLOCK DIAGRAM
R
F
C
F
LOGIC
BIAS
REGULATOR
COMP
COMP
LEVEL
SHIFTER
BUFFER
R
F
C
F
GND
HIGH
SIDE
DRIVER
LOW SIDE
DRIVER
HVG
LVG
OUT
BOOTV
S
R
HV
C
VS
C
BOOT
H.V.
LOAD
D94IN058D
CHARGE
PUMP
Source
18
7
6
54
3
2
V
S
V
S
L6569 L6569A
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ABSOLUTE MAXIMUM RATINGS
(*)The device has an internal zener clamp between GND and VS (typical 15.6V).Therefore the circuit should not be driven by a DC low im-
pedance power source.
Note:
ESD immunity for pins 6, 7 and 8 is guaranteed up to 900 V (Human Body Model)
THERMAL DATA
RECOMMENDED OPERATING CONDITIONS
PIN CONNECTION
Symbol Parameter Value Unit
I
S
(*) Supply Current 25 mA
V
CF
Oscillator Resistor Voltage 18 V
V
LVG
Low Side Switch Gate Output 14.6 V
V
OUT
High Side Switch Source Output -1 to V
BOOT
- 18 V
V
HVG
High Side Switch Gate Output -1 to V
BOOT
V
V
BOOT
Floating Supply Voltage 618 V
V
BOOT/OUT
Floating Supply vs OUT Voltage 18 V
dV
BOOT
/dt VBOOT Slew Rate (Repetitive) ± 50 V/ns
dV
OUT
/dt VOUT Slew Rate (Repetitive) ± 50 V/ns
T
stg
Storage Temperature -40 to 150 °C
T
j
Junction Temperature -40 to 150 °C
T
amb
Ambient Temperature (Operative) -40 to 125 °C
Symbol Parameter Minidip SO8 Unit
R
th j-amb
Thermal Resistance Junction-Ambient Max 100 150 °C/W
Symbol Parameter Min. Max. Unit
V
S
Supply Voltage 10 V
CL
V
V
BOOT
Floating Supply Voltage - 500 V
V
OUT
High Side Switch Source Output -1 V
BOOT
-V
CL
V
f
out
Oscillation Frequency 200 kHz
V
S
RF
C
F
GND
1
3
2
4 LVG
OUT
HVG
BOOT8
7
6
5
D94IN059
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L6569 L6569A
PIN FUNCTION
ELECTRICAL CHARACTERISTCS
(V
S
= 12V; V
BOOT
- V
OUT
= 12V; T
j
= 25°C; unless otherwise specified.)
Pin Description
1 VS Supply input voltage with internal clamp [typ. 15.6V]
2 RF Oscillator timing resistor pin.
A buffer set alternatively to V
S
and GND can provide current to the external resistor RF
connected between pin 2 and 3.
Alternatively, the signal on pin 2 can be used also to drive another IC (i.e. another L6569 to drive
a full H-bridge)
3 CF Oscillator timing capacitor pin.
A capacitor connected between this pin and GND fixes (together with R
F
) the oscillating
frequency
Alternatively an external logic signal can be applied to the pin to drive the IC.
4 GND Ground
5 LVG Low side driver output.
The output stage can deliver 170mA source and 270mA sink [typ.values].
6 OUT Upper driver floating reference
7 HVG High side driver output.
The output stage can deliver 170mA source and 270mA sink [typ.values].
8 BOOT Bootstrap voltage supply.
It is the upper driver floating supply. The bootstrap capacitor connected between this pin and pin
6 can be fed by an internal structure named “bootstrap driver” (a patented structure). This
structure can replace the external bootstrap diode.
Symbol Pin Parameter Test Condition Min. Typ. Max. Unit
V
SUVP
1 VS Turn On Threshold 8.3 9 9.7 V
V
SUVN
VS Turn Off Threshold 7.3 8 8.7 V
V
SUVH
VS Hysteresis 0.7 1 1.3 V
V
CL
VS Clamping Voltage I
S
= 5mA 14.6 15.6 16.6 V
I
SU
Start Up Current V
S
< V
SUVN
150 250 µA
I
q
Quiescent Current V
S
> V
SUVP
500 700 µA
I
BOOTLK
8 Leakage Current BOOT pin vs
GND
V
BOOT
= 580V 5 µA
I
OUTLK
6 Leakage Current OUT pin vs
GND
V
OUT
= 562V 5 µA
I
HVG SO
7 High Side Driver Source Current V
HVG
= 6V 110 175 mA
I
HVG SI
High Side Driver Sink Current V
HVG
= 6V 190 275 mA
I
LVG SO
5 Low Side Driver Source Current V
LVG
= 6V 110 175 mA
I
LVG S
I Low Side Driver Sink Current V
LVG
= 6V 190 275 mA

E-L6569

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Gate Drivers Hi-Volt Half Bridge
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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