IRLR024ZPBF Datasheet IRLR024ZTRPBF, IRLR024ZPBF, IRLR024ZTRLPBF | P1-P3

IRLR024ZPbF

IRLU024ZPbF

HEXFET

®

Power MOSFET

V

DSS

= 55V

R

DS(on)

= 58mΩ

I

D

= 16A

10/01/10

www.irf.com 1

This HEXFET

®

Power MOSFET utilizes the latest

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of this

design are a 175°C junction operating temperature,

fast switching speed and improved repetitive

avalanche rating . These features combine to make

this design an extremely efficient and reliable device

for use in a wide variety of applications.

S

D

G

Description

Features

n Logic Level

n Advanced Process Technology

n Ultra Low On-Resistance

n 175°C Operating Temperature

n Fast Switching

n Repetitive Avalanche Allowed up to Tjmax

n Lead-Free

D-Pak

IRLR024ZPbF

I-Pak

IRLU024ZPbF

HEXFET

®

is a registered trademark of International Rectifier.

Absolute Maximum Ratings

Parameter Units

I

D

@ T

C

= 25°C

Continuous Drain Current, V

GS

@ 10V

(Silicon Limited)

I

D

@ T

C

= 100°C

Continuous Drain Current, V

GS

@ 10V

A

I

DM

Pulsed Drain Current

P

D

@T

C

= 25°C Power Dissipation

W

Linear Derating Factor

W/°C

V

GS

Gate-to-Source Voltage

V

E

AS (Thermally limited)

Single Pulse Avalanche Energy

mJ

E

AS

(Tested )

Single Pulse Avalanche Energy Tested Value

I

AR

Avalanche Current

A

E

AR

Repetitive Avalanche Energy

mJ

T

J

Operating Junction and

T

STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter Typ. Max. Units

R

θ

JC

Junction-to-Case

––– 4.28

R

θ

JA

Junction-to-Ambient (PCB mount)

––– 40 °C/W

R

θ

JA

Junction-to-Ambient

––– 110

Max.

16

11

64

-55 to + 175

300 (1.6mm from case )

35

0.23

± 16

25

See Fig.12a, 12b, 15, 16



PD - 95773B

IRLR/U024ZPbF

2 www.irf.com

S

D

G

S

D

G

Electr

i

cal

C

haracter

i

st

i

cs

@

T

J

= 25°

C

(

unless otherw

i

se spec

ifi

ed

)

Parameter Min. Typ. Max. Units

V

(BR)DSS

Drain-to-Source Breakdown Voltage 55 ––– ––– V

∆V

(BR)DSS

/

∆T

J

Breakdown Voltage Temp. Coefficient ––– 0.053 ––– V/°C

––– 46 58

R

DS(on)

Static Drain-to-Source On-Resistance ––– ––– 80

mΩ

––– ––– 100

V

GS(th)

Gate Threshold Voltage 1.0 ––– 3.0 V

gfs Forward Transconductance 7.4 ––– ––– S

I

DSS

Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 250

I

GSS

Gate-to-Source Forward Leakage ––– ––– 200 nA

Gate-to-Source Reverse Leakage ––– ––– -200

Q

g

Total Gate Charge ––– 6.6 9.9

Q

gs

Gate-to-Source Charge ––– 1.6 ––– nC

Q

gd

Gate-to-Drain ("Miller") Charge ––– 3.9 –––

t

d(on)

Turn-On Delay Time ––– 8.2 –––

t

r

Rise Time ––– 43 –––

t

d(off)

Turn-Off Delay Time ––– 19 ––– ns

t

f

Fall Time ––– 16 –––

L

D

Internal Drain Inductance ––– 4.5 ––– Between lead,

nH 6mm (0.25in.)

L

S

Internal Source Inductance ––– 7.5 ––– from package

and center of die contact

C

iss

Input Capacitance ––– 380 –––

C

oss

Output Capacitance ––– 62 –––

C

rss

Reverse Transfer Capacitance ––– 39 ––– pF

C

oss

Output Capacitance ––– 180 –––

C

oss

Output Capacitance ––– 50 –––

C

oss

eff.

Effective Output Capacitance ––– 81 –––

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units

I

S

Continuous Source Current ––– ––– 16

(Body Diode) A

I

SM

Pulsed Source Current ––– ––– 64

(Body Diode)

V

SD

Diode Forward Voltage ––– ––– 1.3 V

t

rr

Reverse Recovery Time ––– 16 24 ns

Q

rr

Reverse Recovery Charge ––– 11 17 nC

t

on

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

V

GS

= 5.0V, I

D

= 5.0A

V

GS

= 4.5V, I

D

= 3.0A

V

GS

= 0V, V

DS

= 1.0V, ƒ = 1.0MHz

V

GS

= 0V, V

DS

= 44V, ƒ = 1.0MHz

V

DS

= 25V, I

D

= 9.6A

I

D

= 5.0A

V

DS

= 44V

V

GS

= 16V

V

GS

= -16V

V

GS

= 5.0V

V

DD

= 28V

I

D

= 5.0A

R

G

= 28 Ω

T

J

= 25°C, I

S

= 9.6A, V

GS

= 0V

T

J

= 25°C, I

F

= 9.6A, V

DD

= 28V

di/dt = 100A/

µ

s

Conditions

V

GS

= 0V, I

D

= 250µA

Reference to 25°C, I

D

= 1mA

V

GS

= 10V, I

D

= 9.6A

V

DS

= V

GS

, I

D

= 250µA

V

DS

= 55V, V

GS

= 0V

V

DS

= 55V, V

GS

= 0V, T

J

= 125°C

MOSFET symbol

showing the

integral reverse

p-n junction diode.

Conditions

V

GS

= 5.0V

V

GS

= 0V

V

DS

= 25V

ƒ = 1.0MHz

V

GS

= 0V, V

DS

= 0V to 44V

IRLR/U024ZPbF

www.irf.com 3

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

vs. Drain Current

0.1 1 10

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

3.0V

≤

60µs PULSE WIDTH

Tj = 175°C

VGS

TOP 10V

9.0V

7.0V

5.0V

4.5V

4.0V

3.5V

BOTTOM 3.0V

0.1 1 10

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

VGS

TOP 10V

9.0V

7.0V

5.0V

4.5V

4.0V

3.5V

BOTTOM 3.0V

≤

60µs PULSE WIDTH

Tj = 25°C

3.0V

0 2 4 6 8 10 12

V

GS

, Gate-to-Source Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

Α

)

T

J

= 25°C

T

J

= 175°C

V

DS

= 10V

≤

60µs PULSE WIDTH

0 2 4 6 8 10 12 14 16

I

D

,Drain-to-Source Current (A)

0

5

10

15

G

f

s

,

F

o

r

w

a

r

d

T

r

a

n

s

c

o

n

d

u

c

t

a

n

c

e

(

S

)

T

J

= 25°C

T

J

= 175°C

V

DS

= 8.0V

300µs PULSE WIDTH

IRLR024ZPBF

IRLR024ZPBF

Products related to this Datasheet