IRLS4030-7PPbF
2 www.irf.com
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.05mH
R
G
= 25Ω, I
AS
= 110A, V
GS
=10V. Part not recommended for use
above this value .
I
SD
≤ 110A, di/dt ≤ 1520A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
S
D
G
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
R
θJC
value shown is at time zero.
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V
∆V
(BR)DSS
∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 3.2 3.9
mΩ
––– 3.3 4.1
V
GS(th)
Gate Threshold Voltage 1.0 ––– 2.5 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
R
G(int)
Internal Gate Resistance
–––
2.0 ––– Ω
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 250 ––– ––– S
Q
g
Total Gate Charge ––– 93 140 nC
Q
gs
Gate-to-Source Charge ––– 27 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 43 –––
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
)
––– 50 –––
t
d(on)
Turn-On Delay Time ––– 53 ––– ns
t
r
Rise Time ––– 160 –––
t
d(off)
Turn-Off Delay Time ––– 110 –––
t
f
Fall Time ––– 87 –––
C
iss
Input Capacitance ––– 11490 –––
C
oss
Output Capacitance ––– 680 –––
C
rss
Reverse Transfer Capacitance ––– 300 ––– pF
C
oss
eff. (ER)
Effective Output Capacitance (Energy Related)
––– 760 –––
C
oss
eff. (TR)
Effective Output Capacitance (Time Related)
g
––– 1170 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– –––
190
A
(Body Diode)
I
SM
Pulsed Source Current ––– ––– 750
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 53 ––– ns
T
J
= 25°C V
R
= 85V,
––– 63 –––
T
J
= 125°C I
F
= 110A
Q
rr
Reverse Recovery Charge ––– 99 ––– nC
T
J
= 25°C
di
dt = 100A
µs
––– 155 –––
T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 3.3 ––– A
T
J
= 25°C
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
DS
= 50V
Conditions
V
GS
= 4.5V
f
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
h
V
GS
= 0V, V
DS
= 0V to 80V
g
T
J
= 25°C, I
S
= 110A, V
GS
= 0V
f
integral reverse
p-n junction diode.
MOSFET symbol
showing the
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 5mA
c
V
GS
= 10V, I
D
= 110A
f
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
V
GS
= 4.5V, I
D
= 94A
f
I
D
= 110A
R
G
= 2.7Ω
V
GS
= 4.5V
f
V
DD
= 65V
I
D
= 110A, V
DS
=0V, V
GS
= 4.5V
Conditions
V
DS
= 25V, I
D
= 110A
I
D
= 110A
V
GS
= 16V
V
GS
= -16V
