© 2003 IXYS All rights reserved
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Phaseleg Configuration
Dual Power
MOSFET Module
V
DSS
= 75 V
I
D25
= 1500 A
R
DS(on)
= 0.55 m
ΩΩ
ΩΩ
Ω
VMM 1500-0075P
MOSFET T1 + T2
Symbol Conditions Maximum Ratings
V
DSS
T
VJ
= 25°C to 150°C 75 V
V
GS
±20 V
I
D25
T
C
= 25°C ① 1500 A
I
D80
T
C
= 80°C ① 1200 A
I
F25
(diode) T
C
= 25°C ① 1500 A
I
F80
(diode) T
C
= 80°C ① 1100 A
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
R
DSon
V
GS
= 10 V;
I
D
= I
D80
0.55 0.8 mΩ
V
GSth
V
DS
= 20 V;
I
D
= 10 mA 2 4 V
I
DSS
V
DS
= V
DSS
;
V
GS
= 0 V; T
VJ
= 25°C 0.15 mA
T
VJ
= 125°C 1.5 mA
I
GSS
V
GS
= ±20 V; V
DS
= 0 V 1.5 µA
Q
g
2480 nC
Q
gs
330 nC
Q
gd
940 nC
t
d(on)
60 ns
t
r
170 ns
t
d(off)
320 ns
t
f
200 ns
V
F
(diode) I
F
= 750 A;
V
GS
= 0 V 1.2 1.6 V
t
rr
(diode) I
F
= 200 A;
-di/dt = 1000 A/µs; V
DS
= 30 V 90 ns
R
thJC
0.06 K/W
R
thJS
with heat transfer paste 0.12 K/W
①
additional current limitation by external leads
Features
• Trench MOSFETs
– low R
DSon
– optimized intrinsic reverse diode
• package
– low inductive current path
– screw connection to high current
main terminals
– use of non interchangeable
connectors for auxiliary terminals
possible
– Kelvin source terminals for easy drive
– isolated DCB ceramic base plate
Applications
• converters with high power density for
– main and auxiliary AC drives of
electric vehicles
– 4 quadrant DC drives
– power supplies with low input voltage,
e.g. from fuel cells or solar cells
V
GS
= 10 V; V
DS
= 60 V; I
D
= 500 A
V
GS
= 10 V; V
DS
= 30 V;
I
D
= 250 A; R
G
= 1 Ω
IXYS reserves the right to change limits, test conditions and dimensions.
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Preliminary data
