VFT4045BP
www.vishay.com
Vishay General Semiconductor
Revision: 25-Feb-15
1
Document Number: 89456
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low V
F
= 0.28 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: ITO-220AC
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
Notes
(1)
With heatsink
(2)
Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
PRIMARY CHARACTERISTICS
I
F(DC)
40 A
V
RRM
45 V
I
FSM
240 A
V
F
at I
F
= 40 A 0.51 V
T
OP
max. (AC mode) 150 °C
T
J
max. (DC forward current) 200 °C
Package ITO-220AC
Diode variation Single die
PIN 1
PIN 2
TMBS
®
ITO-220AC
VFT4045BP
1
2
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VFT4045BP UNIT
Maximum repetitive peak reverse voltage V
RRM
45 V
Maximum DC forward bypassing current (fig. 1) I
F(DC)
(1)
40 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
240 A
Operating junction temperature range (AC mode) T
OP
-40 to +150 °C
Isolation voltage from termal to heatsink t = 1 min V
AC
1500 V
Junction temperature in DC forward current
without reverse bias, t 1 h
T
J
(2)
200 °C
