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MPS8599

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 5
1 Publication Order Number:
MPS8098/D
(NPN) MPS8098, MPS8099*,
(PNP) MPS8598, MPS8599*
*Preferred Devices
Amplifier Transistors
Voltage and Current are Negative
for PNP Transistors
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MPS8098, MPS8598
MPS8099, MPS8599
V
CEO
60
80
Vdc
Collector−Base Voltage
MPS8098, MPS8598
MPS8099, MPS8599
V
CBO
60
80
Vdc
Emitter−Base Voltage V
EBO
4.0 Vdc
Collector Current − Continuous I
C
500 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
(Note 1)
R
q
JA
200 °C/W
Thermal Resistance, Junction−to−Case
R
q
JC
83.3 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. R
q
JA
is measured with the device soldered into a typical printed circuit board.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
STYLE 1
MPS8098,
MPS8099
NPN
COLLECTOR
3
2
BASE
1
EMITTER
STYLE 1
MPS8598,
MPS8599
PNP
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
MPS8x9y = Device Code
x = 0 or 5
y = 8 or 9
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
TO−92
CASE 29−11
STYLE 1
1
2
3
MARKING DIAGRAM
MPS
8x9y
AYWW G
G
(NPN) MPS8098, MPS8099*, (PNP) MPS8598, MPS8599*
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2)
(I
C
= 10 mAdc, I
B
= 0) MPS8098, MPS8598
MPS8099, MPS8599
V
(BR)CEO
60
80
−
−
Vdc
Collector−Base Breakdown Voltage
(I
C
= 100 mAdc, I
E
= 0) MPS8098, MPS8598
MPS8099, MPS8599
V
(BR)CBO
60
80
−
−
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0) MPS8098, MPS8099
MPS8598, MPS8599
V
(BR)EBO
6.0
5.0
−
−
Vdc
Collector Cutoff Current
(V
CE
= 60 Vdc, I
B
= 0)
I
CES
− 0.1
mAdc
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0) MPS8098, MPS8598
(V
CB
= 80 Vdc, I
E
= 0) MPS8099, MPS8599
I
CBO
−
−
0.1
0.1
mAdc
Emitter Cutoff Current
(V
EB
= 6.0 Vdc, I
C
= 0) MPS8098, MPS8099
(V
EB
= 4.0 Vdc, I
C
= 0) MPS8598, MPS8599
I
EBO
−
−
0.1
0.1
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
h
FE
100
100
75
300
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 5.0 mAdc)
(I
C
= 100 mAdc, I
B
= 10 mAdc)
V
CE(sat)
−
−
0.4
0.3
Vdc
Base−Emitter On Voltage
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc) MPS8098, MPS8598
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc) MPS8099, MPS8599
V
BE(on)
0.5
0.6
0.7
0.8
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
f
T
150 − MHz
Output Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz) MPS8098, MPS8099
MPS8598, MPS8599
C
obo
−
−
6.0
8.0
pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz) MPS8098, MPS8099
MPS8598, MPS8599
C
ibo
−
−
25
30
pF
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle = 2.0%.
Figure 1. MPS8098, MPS8099, MPS8598 and MPS8599 Thermal Response
t, TIME (ms)
1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
0.03
0.02
0.1
0.07
0.05
0.01
0.3
0.2
1.0
0.7
0.5
r(t), NORMALIZED TRANSIENT
THERMAL RESISTANCE
Z
q
JC
(t) = r(t) • R
q
JC
T
J(pk)
− T
C
= P
(pk)
Z
q
JC
(t)
Z
q
JA
(t) = r(t) • R
q
JA
T
J(pk)
− T
A
= P
(pk)
Z
q
JA
(t)
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
1
(SEE AN469)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
P
(pk)
D = 0.5
0.2
0.1
0.02
0.01
SINGLE PULSE
SINGLE PULSE
0.05
(NPN) MPS8098, MPS8099*, (PNP) MPS8598, MPS8599*
http://onsemi.com
3
Figure 2. Switching Time Test Circuits
OUTPUT
TURN−ON TIME
−1.0 V
V
CC
+40 V
R
L
* C
S
t 6.0 pF
R
B
100
100
V
in
5.0 mF
t
r
= 3.0 ns
0
+10 V
5.0 ms
OUTPUT
TURN−OFF TIME
+V
BB
V
CC
+40 V
R
L
* C
S
t 6.0 pF
R
B
100
100
V
in
5.0 mF
t
r
= 3.0 ns
5.0 ms
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
Figure 3. MPS8098/99 Current−Gain −
Bandwidth Product
Figure 4. MPS8598/99 Current−Gain −
Bandwidth Product
Figure 5. MPS8098/99 Capacitance Figure 6. MPS8598/99 Capacitance
1002.0
I
C
, COLLECTOR CURRENT (mA)
300
200
100
70
50
30
I
C
, COLLECTOR CURRENT (mA)
−100−10
200
100
70
50
30
10 1000.1
V
R
, REVERSE VOLTAGE (VOLTS)
40
20
10
6.0
V
R
, REVERSE VOLTAGE (VOLTS)
−1.0 −100−0.1 −2.020
T
J
= 25°C
T
J
= 25°C
f
T
, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
NPN PNP
C, CAPACITANCE (pF)
3.0 5.0 7.0 10 20 30 50 70 −2.0 −3.0 −5.0 −7.0 −20 −30 −50 −70
300
f
T
, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
501.0 2.0 5.00.2 0.5
4.0
2.0
C
ibo
C
obo
−0.2 −0.5 −5.0 −10 −20 −50
T
J
= 25°C
C, CAPACITANCE (pF)
1.0
V
CE
= 1.0 V
5.0 V
T
J
= 25°C
V
CE
= −1.0 V
−5.0 V
−1.0
40
20
10
6.0
T
J
= 25°C
4.0
2.0
C
ibo
C
obo
8.0
8.0
P1-P3P4-P6P7-P7

MPS8599

Mfr. #:
Buy MPS8599
Manufacturer:
ON Semiconductor
Description:
TRANS PNP 80V 0.5A TO-92
Lifecycle:
New from this manufacturer.
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