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AMMC-6345-W50

P1-P3P4-P6P7-P9P10-P11
Description
The AMMC-6345 MMIC is a broadband medium power
amplifier designed for use in driving stage for transmit-
ters that operate in various frequency bands between
20GHz and 45GHz. It can be used as a driver stage for
the AMMC-6425, 6430 and 6440 (18-27GHz, 25-32GHz
and 37-42GHz) 1W MMIC power amplifiers when linear
operation is required. At 40GHz, it provides 24dBm of
output power (P-1dB), 20dB of gain, and a 32 dBm out-
put third order intercept (OIP3). The device has input and
output matching circuitry for use in 50 : environments.
The AMMC-6345 integrates a temperature compensated
RF power detection circuit that enables power detection
of 0.8V/W at 40GHz. The device operates on 5V for cur-
rent supply (negative voltage only needed for Vg). It is
fabricated in a PHEMT process for exceptional power and
gain performance. For improved reliability and moisture
protection, the die is passivated at the active areas.
Features
x Wide frequency range: 20 - 45 GHz
x High gain: 20 dB
x Power: @40 GHz, P-1dB=24 dBm
x Highly linear: OIP3=32dBm
x Integrated RF power detector
x 5.0 Volt, -0.55 Volt, 480mA operation
Applications
x Microwave Radio systems
x Satellite VSAT and DBS systems
x LMDS & Pt-Pt mmW Long Haul
x 802.16 & 802.20 WiMax BWA
x WLL and MMDS loops
x Can be driver amplifier for the AMMC-64xx power
amplifiers
AMMC-6345
20 – 45 GHz Driver Amplifier
Data Sheet
Chip Size: 2500 x 1150 Pm (100 x 45 mils)
Chip Size Tolerance: ± 10Pm (±0.4 mils)
Chip Thickness: 100 ± 10Pm (4 ± 0.4 mils)
Pad Dimensions: 100 x 100Pm (4 ± 0.4 mils)
NOTE: THESE DEVICES ARE ESD SENSITIVE. THE FOLLOWING PRECAUTIONS ARE STRONGLY RECOMMENDED.
ENSURE THAT AN ESD APPROVED CARRIER IS USED WHEN DICE ARE TRANSPORTED FROM ONE DESTINATION
TO ANOTHER. PERSONAL GROUNDING IS TO BE WORN AT ALL TIMES WHEN HANDLING THESE DEVICES
2
Absolute Maximum Ratings
Symbols Parameters Units Minimum Maximum Notes
Vd-Vg Drain to Gate Voltage V 8
Vd Positive Supply Voltage V 5.5
Vg Gate Supply Voltage V -2.5 0.5
Id Drain Current mA TBD 2
PD Power Dissipation W 3.5 2 and 3
Pin CW Input Power dBm 23 2
Tch Operating Channel Temp qC +150 4
Tstg Storage Case Temp. qC -65 to +155
Tmax Maximum Assembly Temp (30 sec max) qC +320
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device. Functional operation at or near these
limitations will significantly reduce the lifetime of the device.
2. Dissipated power PD is in any combination of DC voltage, Drain Current, input power and power delivered to the load.
3. When operated at maximum PD with a base plate temperature of 85 qC, the median time to failure (MTTF) is significantly reduced.
4. These ratings apply to each individual FET. The operating channel temperature will directly affect the device MTTF. For maximum life, it is
recommended that junction temperatures (Tj) be maintained at the lowest possible levels. See MTTF vs. Tchannel Temperature Table.
AMMC-6345 DC Specifications/Physical Properties
[1]
Symbol Parameters and Test Conditions Units Min. Typ. Max.
Id Drain Supply Current
(under any RF power drive and temperature)
(Vd=5.0V, Vg set for Id typical)
mA 480 600
Vg Gate Supply Operating Voltage I
d(Q)
= 480mA V -0.75 -0.55 -0.4
Vp Pinch-off voltage (Vdd=2.5V, Ids=20mA) V -1.2
Tch-b
Thermal Resistance
[2]
Backside temperature, Tb=25°C °C/W 8.2
Notes:
1. Ambient operational temperature T
A
=25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (T
ch-b
) = 9.0°C/W at T
channel
(T
c
) = 70°C as measured using infrared microscopy. Thermal Resistance
at backside temperature (T
b
) = 25°C calculated from measured data.
Thermal Properties
Parameter Test Conditions Value
Maximum Power Dissipation Tbaseplate = 85°C PD = 3.5W
Tchannel = 150°C
Thermal Resistance (Tjc) Vd = 5V
Id = 480mA
PD = 2.4W
Tbaseplate = 85°C
Tjc = 8.2°C/W
Tchannel = 104°C
Thermal Resistance (Tjc)
Under RF Drive
Vd = 5V
Id = 510mA
Pout = 24dBm
Pd = 2.3W
Tbaseplate = 85°C
Tjc = 8.2°C/W
Tchannel = 104°C
3
Gain at 30 GHz P-1dB at 30 GHz
Typical distribution of Small Signal Gain and Output Power @P-1dB. Based on 1500 part sampled over several produc-
tion lots.
P-1dB at 38 GHz
LSL
18 19 20
LSL
22.6 22.7 22.8 22.9 23 23.1 23.2 23.3 23.4
LSL
23 24
MTTF vs. Tchannel Temperature
Operation 60% Confidence Level 90% Confidence Level Point Data R=
Tj λ (ФIT) MTTF (hrs) λ (ФIT) MTTF (hrs) λ (ФIT) MTTF (Yrs)
150 3511 2.8E+05 8822 1.1E+05 3831 2.6E+05
140 1298 7.7E+05 3260 3.1E+05 1416 7.1E+05
130 456 2.2E+06 1147 8.7E+05 498 2.0E+05
120 152 6.6E+06 382 2.6E+06 166 6.0E+06
110 48 2.1E+07 120 8.3E+06 52 1.9E+06
100 14 7.0E+07 36 2.8E+07 15 6.5E+07
90 4 2.5E+08 10 1.0E+08 4 2.3E+08
80 1 9.9E+08 3 3.9E+08 1 9.1E+08
70 0 4.2E+09 1 1.7E+09 0 3.8E+09
60 0 1.9E+10 0 7.6E+09 0 1.7E+10
50 0 9.6E+10 0 3.8E+10 0 8.8E+10
AMMC-6345 RF Specifications
[1,2]
( T
A
= 25°C, V
d
=5V, I
d(Q)=
480 mA, Z
o
=50 :)
Symbol Parameters and Test Conditions Units Minimum Typical Maximum Sigma
Gain Small-signal Gain
[2]
dB 18 0.28
P
-1dB
Output Power at 1dB Gain Compression dBm 22.5 24 0.20
P
-3dB
Output Power at 3dB Gain Compression dBm 25 0.17
OIP3 Third Order Intercept Point;
'f=100MHz; Pin=-20dBm
dBm 32 0.8
RLin Input Return Loss
[2]
dB -17 0.92
RLout Output Return Loss
[2]
dB -13 0.63
Isolation Min. Reverse Isolation dB -40 1.30
Notes:
1. Small/Large -signal data measured in wafer form T
A
= 25°C.
2. 100% on-wafer RF test is done at frequency = 25, 30, and 38 GHz. Statistics based on 1500 part sample
P1-P3P4-P6P7-P9P10-P11

AMMC-6345-W50

Mfr. #:
Buy AMMC-6345-W50
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier Amp MMIC 20-45GHz
Lifecycle:
New from this manufacturer.
Delivery:
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