DS1556 1M, Nonvolatile, Y2K-Compliant Timekeeping RAM
13 of 18
AC CHARACTERISTICS—READ CYCLE
(Over the Operating Range)
V
CC
= 5.0V 10% V
CC
= 3.3V 10%
PARAMETER SYMBOL
MIN MAX MIN MAX
UNITS
Read Cycle Time t
RC
70 120 ns
Address Access Time t
AA
70 120 ns
CE to DQ Low-Z
t
CEL
5 5 ns
CE Access Time
t
CEA
70 120 ns
CE Data Off Time
t
CEZ
25 40 ns
OE to DQ Low-Z
t
OEL
5 5 ns
OE Access Time
t
OEA
35 100 ns
OE Data Off Time
t
OEZ
25 35 ns
Output Hold from Address t
OH
5 5 ns
AC CHARACTERISTICS—WRITE CYCLE
(Over the Operating Range)
V
CC
= 5.0V 10% V
CC
= 3.3V 10%
PARAMETER SYMBOL
MIN MAX MIN MAX
UNITS
Write Cycle Time t
WC
70 120 ns
Address Access Time t
AS
0 0 ns
WE Pulse Width
t
WEW
50 100 ns
CE Pulse Width
t
CEW
60 110 ns
Data Setup Time t
DS
30 80 ns
Data Hold Time (Note 9) t
DH1
5 5 ns
Data Hold Time (Note 10) t
DH2
5 5 ns
Address Hold Time (Note 9) t
AH1
5 0 ns
Address Hold Time
(Note 10)
t
AH2
5 5 ns
WE Data Off Time
t
WEZ
25 40 ns
Write Recovery Time t
WR
5 10 ns
DS1556 1M, Nonvolatile, Y2K-Compliant Timekeeping RAM
14 of 18
Figure 6. Write Cycle Timing, Write-Enable Controlled
Figure 7. Write Cycle Timing, Chip-Enable Controlled
DS1556 1M, Nonvolatile, Y2K-Compliant Timekeeping RAM
15 of 18
POWER-UP/DOWN CHARACTERISTICS—5V
(V
CC
= 5.0V 10%, Over the Operating Range.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
CE or WE at V
IH
, Before
Power-Down
t
PD
0
s
V
CC
Fall Time: V
PF(MAX)
to V
PF(MIN)
t
F
300
s
V
CC
Fall Time: V
PF(MIN)
to V
SO
t
FB
10
s
V
CC
Rise Time: V
PF(MIN)
to V
PF(MAX)
t
R
0
s
V
PF
to RST High
t
REC
40 200 ms
Expected Data-Retention Time
(Oscillator On)
t
DR
(Notes 6, 7) 10 years
Figure 8. Power-Up/Down Waveform Timing (5V Device)

DS1556-70IND+

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
Real Time Clock 1M NV RAM Timekeeper
Lifecycle:
New from this manufacturer.
Delivery:
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