10
FN4882.5
July 21, 2005
In HIP6503 applications, loss of any one active ATX output
(3.3V
IN
, 5V
IN
, or 12V
IN
; as detected by the on-board voltage
monitors) during active state operation causes the chip to
switch to S5 sleep state, in addition to reporting the input UV
condition on the FAULT/MSEL pin. Exiting from this forced-
S5 state can only be achieved by returning the faulting input
voltage above its UV threshold, by resetting the chip through
removal of 5V
SB
bias voltage, or by bringing the SS pin at a
potential lower than 0.8V.
Output Voltages
The output voltages are internally set and do not require any
external components. Selection of the V
MEM
memory
voltage is done by means of an external resistor connected
between the FAULT/MSEL pin and ground. An internal 40A
(typical) current source creates a voltage drop across this
resistor. Following every 3.3V
SB
ramp-up or chip reset (see
Soft-Start Circuit), this voltage is compared with an internal
reference and the setting is latched in. Based on this
comparison, the output voltage is set at either 2.5V
(R
SEL
=1k), or 3.3V (R
SEL
= 10k). It is very important
that no capacitor is connected to the FAULT/MSEL pin; the
presence of a capacitive element at this pin can lead to false
memory voltage selection. See Figure 9 for details.
Application Guidelines
Soft-Start Interval
The 5VSB output of a typical ATX supply is capable of
725mA. During power-up in a sleep state, it needs to provide
sufficient current to charge up all the output capacitors and
simultaneously provide some amount of current to the output
loads. Drawing excessive amounts of current from the 5VSB
output of the ATX can lead to voltage collapse and induce a
pattern of consecutive restarts with unknown effects on the
system’s behavior or health.
The built-in soft-start circuitry allows tight control of the slew-
up speed of the output voltages controlled by the HIP6503,
thus enabling power-ups free of supply drop-off events.
Since the outputs are ramped up in a linear fashion, the
current dedicated to charging the output capacitors can be
calculated with the following formula:
, where
I
SS
- soft-start current (typically 10A)
C
SS
- soft-start capacitor
V
BG
- bandgap voltage (typically 1.26V)
C
OUT
x V
OUT
) - sum of the products between the
capacitance and the voltage of an output (total charge
delivered to all outputs)
Due to the various system timing events, it is recommended
that the soft-start interval not be set to exceed 30ms.
Shutdown
In case of a FAULT condition that might endanger the
computer system, or at any other time, all the HIP6503
outputs can be shut down by pulling the SS pin below the
specified shutdown level (typically 0.8V) with an open drain
or open collector device capable of sinking a minimum of
2mA. Pulling the SS pin low effectively shuts down all the
pass elements. Upon release of the SS pin, the HIP6503
undergoes a new soft-start cycle and resumes normal
operation in accordance to the ATX supply and control pins
status.
Layout Considerations
The typical application employing a HIP6503 is a fairly
straight forward implementation. Like with any other linear
regulator, attention has to be paid to the few potentially
sensitive small signal components, such as those connected
to sensitive nodes or those supplying critical by-pass
current.
The power components (pass transistors) and the controller
IC should be placed first. The controller should be placed in
a central position on the motherboard, closer to the memory
load if possible, but not excessively far from the clock chip or
the processor. Insure the 1V8SB, DRV2 and VSEN2
connections are properly sized to carry 250mA without
significant resistive losses; similar guideline applies to the
VCLK output, which can deliver as much as 800mA (typical).
As the current for the VCLK output is provided from the ATX
3.3V, the connection from the 3V3 pin to the 3.3V plane
should be sized to carry the maximum clock output current
while exhibiting negligible voltage losses. Similarly, the
5VSB and the 5V pins are carrying significant levels of
current - for best results, insure they are connected to their
respective sources through adequately sized traces. The
pass transistors should be placed on pads capable of
heatsinking matching the device’s power dissipation. Where
applicable, multiple via connections to a large internal plane
can significantly lower localized device temperature rise.
Placement of the decoupling and bulk capacitors should
follow a placement reflecting their purpose. As such, the
FIGURE 9. 2.5/3.3V
MEM
OUTPUT VOLTAGE SELECTION
CIRCUITRY DETAILS
FAULT/MSEL
40A
+
-
+
-
0.2V
MEM VOLTAGE
SELECT COMP
R
SEL
R
SEL
V
MEM
1k
10k
2.5V
3.3V
5VSB
HIP6503
11
FN4882.5
July 21, 2005
high-frequency decoupling capacitors should be placed as
close as possible to the load they are decoupling; the ones
decoupling the controller close to the controller pins, the
ones decoupling the load close to the load connector or the
load itself (if embedded). Even though bulk capacitance
(aluminum electrolytics or tantalum capacitors) placement is
not as critical as the high-frequency capacitor placement,
having these capacitors close to the load they serve is
preferable.
The critical small signal components include the soft-start
capacitor, C
SS
, as well as the memory selection resistor,
R
SEL
. Locate these components close to the respective pins
of the control IC, and connect them to ground through a via
placed close to the ground pad. Minimize any leakage
current paths from these nodes, since the internal current
sources are only 10s of microamperes (10A to 40A).
A multi-layer printed circuit board is recommended. Figure
10 shows the connections of most of the components in the
converter. Note that the individual capacitors shown each
could represent numerous physical capacitors. Dedicate one
solid layer for a ground plane and make all critical
component ground connections through vias placed as close
to the component terminal as possible. Dedicate another
solid layer as a power plane and break this plane into
smaller islands of common voltage levels. Ideally, the power
plane should support both the input power and output power
nodes. Use copper filled polygons on the top and bottom
circuit layers to create power islands connecting the filtering
components (output capacitors) and the loads. Use the
remaining printed circuit layers for small signal wiring.
Component Selection Guidelines
Output Capacitors Selection
The output capacitors for all outputs should be selected to
allow the output voltage to meet the dynamic regulation
requirements of active state operation (S0, S1). The load
transient for the various microprocessor system’s
components may require high quality capacitors to supply
the high slew rate (di/dt) current demands. Thus, it is
recommended that the output capacitors be selected for
transient load regulation, paying attention to their parasitic
components (ESR, ESL).
Also, during the transition between active and sleep states,
there is a short interval of time during which none of the
power pass elements are conducting - during this time the
output capacitors have to supply all the output current. The
output voltage drop during this brief period of time can be
easily approximated with the following formula:
, where
V
OUT
- output voltage drop
ESR
OUT
- output capacitor bank ESR
I
OUT
- output current during transition
C
OUT
- output capacitor bank capacitance
t
t
- active-to-sleep or sleep-to-active transition time (10s typ.)
The output voltage drop is heavily dependent on the ESR
(equivalent series resistance) of the output capacitor bank,
the choice of capacitors should be such as to maintain the
output voltage above the lowest allowable regulation level.
V
CLK
(V
OUT4
) Output Capacitors Selection
The output capacitor for the V
CLK
linear regulator provides
loop stability. Figure 11 outlines a capacitance vs. equivalent
series resistance envelope. For stable operation and
optimized performance, select a C
OUT4
capacitor or
combination of capacitors with characteristics within the
shown envelope.
LOAD
V
OUT1
C
HF1
LOAD
FIGURE 10. PRINTED CIRCUIT BOARD ISLANDS
V
OUT3
Q1
Q2
Q3
Q4
C
SS
+12V
IN
C
IN
VIA CONNECTION TO GROUND PLANE
ISLAND ON POWER PLANE LAYER
ISLAND ON CIRCUIT/POWER PLANE LAYER
C
BULK2
HIP6503
C
12V
V
OUT2
V
OUT5
SS
GND
VSEN2
5VDLSB
DRV2
3V3DLSB
KEY
12V
5VSB
+5V
SB
DLA
Q5
C
BULK5
LOAD
C
5VSB
LOAD
LOAD
C
HF3
C
HF5
5VDL
+5V
IN
C
HF2
+3.3V
IN
3V3DL
5V
3V3
1V8SB
C
BULK4
C
HF4
C
BULK1
VCLK
C
BULK3
1V8IN
V
OUT
I
OUT
ESR
OUT
t
t
C
OUT
----------------
+



=
HIP6503
12
FN4882.5
July 21, 2005
Input Capacitors Selection
The input capacitors for an HIP6503 application have to
have a sufficiently low ESR as to not allow the input voltage
to dip excessively when energy is transferred to the output
capacitors. If the ATX supply does not meet the
specifications, certain imbalances between the ATX’s
outputs and the HIP6503’s regulation levels could have as a
result a brisk transfer of energy from the input capacitors to
the supplied outputs. At the transition between active and
sleep states, this phenomena could result in the 5VSB
voltage drooping excessively and affecting the output
regulation. The solution to a potential problem such as this is
using larger input capacitors with a lower total combined
ESR.
Transistor Selection/Considerations
The HIP6503 usually requires one P-Channel (or bipolar
PNP), two N-Channel MOSFETs and two bipolar NPN
transistors.
One important criteria for selection of transistors for all the
linear regulators/switching elements is package selection for
efficient removal of heat. The power dissipated in a linear
regulator/switching element is
Select a package and heatsink that maintains the junction
temperature below the rating with the maximum expected
ambient temperature.
Q1
The active element on the 2.5V
MEM
output has to be a
bipolar NPN capable of conducting the maximum active
memory current and exhibit a current gain (h
fe
) of minimum
40 at this current and 0.7V V
CE
.
Q2
The NPN transistor used as sleep state pass element (Q2)
on the 3.3V
DUAL
output has to have a minimum current gain
of 100 at 1.5V V
CE
and 500mA I
CE
throughout the in-circuit
operating temperature range.
Q3, 4, Q2 in 3.3V
MEM
configuration
These N-Channel MOSFETs are used to switch the 3.3V
and 5V inputs provided by the ATX supply into the 3.3V
MEM
,
3.3V
DUAL
/3.3V
SB
, and 5V
DUAL
outputs, while in active (S0,
S1) state. The main criteria for the selection of these
transistors is output voltage budgeting. The maximum
r
DS(ON)
allowed at highest junction temperature can be
expressed with the following equation:
, where
V
INmin
- minimum input voltage
V
OUTmin
- minimum output voltage allowed
I
OUTmax
- maximum output current
The gate bias available for these MOSFETs is of the order of
8V.
Q5
If a P-Channel MOSFET is used to switch the 5VSB output
of the ATX supply into the 5V
DUAL
output during S3 and S5
states (as dictated by EN5VDL status), then the selection
criteria of this device is proper voltage budgeting. The
maximum r
DS(ON)
, however, has to be achieved with only
4.5V of V
GS
, so a logic level MOSFET needs to be selected.
If a PNP device is chosen to perform this function, it has to
have a low saturation voltage while providing the maximum
sleep current and have a current gain sufficiently high to be
saturated using the minimum drive current (typically 20mA).
FIGURE 11. C
OUT4
OUTPUT CAPACITOR
ESR ()
1
0.1
10
0.01
CAPACITANCE (F)
10
100
1000
P
LINEAR
I
O
V
IN
V
OUT
=
r
DS ONmax
V
INmin
V
OUTmin
I
OUTmax
---------------------------------------------------
=
HIP6503

HIP6503CBZ

Mfr. #:
Manufacturer:
Renesas / Intersil
Description:
Power Management Specialized - PMIC W/ANNEAL ACPI PWR MANAGEMNT CIRCUIT
Lifecycle:
New from this manufacturer.
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