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D5V0F4U5P5-7

P1-P3P4-P4
D5V0F4U5P5
Document number: DS36219 Rev. 2 - 2
1 of 4
www.diodes.com
July 2014
© Diodes Incorporated
D5V0F4U5P5
4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY
Features
• IEC 61000-4-2 (ESD): Air – ±15kV, Contact – ±12kV
• 4 Channels of ESD Protection
• Low Channel Input Capacitance of 0.5pF Typical
• Typically Used at High Speed Ports such as USB 2.0,
IEEE1394, Serial ATA, DVI, HDMI, PCI
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
• Case: SOT953
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Finish: Matte Tin, Annealed Over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.002 grams (approximate)
Ordering Information (Note 4)
Product Compliance Marking Reel size(inches) Tape width(mm) Quantity per reel
D5V0F4U5P5-7 AEC-Q101 V3 7 8 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Pin Description (Top View)
V3 = Product type marking code
Device Schematic
Pin 1 Pin 3
2
Pin 5
Pin 4
54
321
I/O1
I/O2
GND
V3
I/O4 I/O3
D5V0F4U5P5
Document number: DS36219 Rev. 2 - 2
2 of 4
www.diodes.com
July 2014
© Diodes Incorporated
D5V0F4U5P5
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit Conditions
Peak Pulse Current
I
PP
2.0 A
8/20µs (Note 7)
ESD Protection – Contact Discharge
V
ESD
_
Contac
t
±12 kV
Standard IEC 61000-4-2
ESD Protection – Air Discharge
V
ESD
_
Ai
r
±15 kV
Standard IEC 61000-4-2
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
P
D
300 mW
Thermal Resistance, Junction to Ambient T
A
= +25°C R
θJA
417
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage
V
RWM
— — 5.5 V —
Channel Leakage Current (Note 6)
I
R
— — 100 nA
V
R
= 5V, Any I/O to GND
Reverse breakdown voltage
V
BR
6.0 — — V
I
R
= 1mA
Forward voltage
V
F
— 0.85 — V
I
F
= 4mA
Clamping Voltage, Positive Transients (Note 7)
V
C
— 9.5 11.5
V
I
PP
= 1A, t
p
= 8/20μs
— 10.5 12.5
I
PP
= 2A, t
p
= 8/20μs
Channel Input Capacitance (Note 8)
C
T
— 0.5 —
pF
V
R
= 0V, f = 1MHz, Any I/O to
GND
— 0.4 0.65
V
R
= 2.5V, f = 1MHz, Any I/O to
GND
Dynamic Resistance
R
DYN
— 0.9 — Ω
I
PP
= 1A, t
p
= 8/20μs
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Clamping voltage value is based on an 8x20µs peak pulse current (I
pp
) waveform.
8. Measured from any I/O to GND.
9. For information on the impact of Diodes' USB 2.0 compatible ESD protectors on signal integrity including eye diagram plots, please refer to AN77 at the
following URL: http://www.diodes.com/destools/appnote_dnote.html.
0
125 175
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Figure 1 Power Derating Curve
A
°
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(mW)
D
25
100
50 75
150
200
Note 5
250
300
350
400
0
50
25 50
75 100 125
150
P
EAK
P
U
LSE DE
R
A
T
IN
G
%
O
F
PEAK POWER OR CURRENT
T , AMBIENT TEMPERATURE (°C)
Figure 2 Pulse Derating Curve
A
0
100
25
75
175 200
D5V0F4U5P5
Document number: DS36219 Rev. 2 - 2
3 of 4
www.diodes.com
July 2014
© Diodes Incorporated
D5V0F4U5P5
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
0
t, TIME ( s)
Figure 3 Pulse Waveform
μ
20 40
60
100
50
0
Peak Value I
pp
Half Value I /2
pp
8x20 Waveform
as defined by R.E.A.
I , PEAK PULSE CURRENT (%I )
PppP
0.01
0.1
1
10
100
1000
300 400 500 600 700 800 900 1000 1100
Figure 4 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
F
I , INSTANTANEOUS FORWARD CURRENT (mA)
F
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
1
10
100
012345
5.5
I , LEAKAGE CURRENT (nA)
R
V , REVERSE VOLTAGE (V)
R
Figure 5 Typical Reverse Characteristics
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
0.2
0.25
0.3
0.35
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
V , REVERSE VOLTAGE (V)
R
Figure 6 Total Capacitance vs. Reverse Voltage
C
,
T
O
T
AL
C
A
P
A
C
I
T
AN
C
E (pF)
T
0.4
0.5
0.6
f = 1MHz
Note 8
0.45
0.55
0.1
0.15
SOT953
Dim Min Max Typ
A 0.40 0.50 0.45
A1 0 0.05
−
b 0.10 0.20 0.15
c 0.12 0.18 0.15
D 0.95 1.05 1.00
E 0.95 1.05 1.00
E1 0.75 0.85 0.80
e
− −
0.35
e1
− −
0.70
L 0.05 0.15 0.10
All Dimensions in mm
L
c
E
D
e1
e
E1
b (5 places)
A
A1
P1-P3P4-P4

D5V0F4U5P5-7

Mfr. #:
Buy D5V0F4U5P5-7
Manufacturer:
Diodes Incorporated
Description:
TVS Diodes / ESD Suppressors 4-Ch TVS Array Low Capacitance
Lifecycle:
New from this manufacturer.
Delivery:
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