PS7802B-1A
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF IF = 5 mA 1.1 1.4 V
Reverse Current IR VR = 5 V 5.0
μ
A
MOS FET Off-state Leakage Current ILoff VD = 40 V 0.1 1 nA
Output Capacitance Cout VD = 0 V, f = 1 MHz, t ≤ 1 s 2.5 3.7 pF
Coupled LED On-state Current IFon IL = 240 mA 4 mA
On-state Resistance Ron IF = 5 mA, IL = 240 mA, t ≤ 10 ms 2.5 3.5
Ω
Turn-on Time
*1, 2
ton IF = 5 mA, VO = 5 V, RL = 500 Ω, 0.2 0.5 ms
Turn-off Time
*1, 2
toff PW ≥ 1.0 ms 0.05 0.5
Isolation Resistance RI-O VI-O = 0.5 kVDC 10
9
Ω
Isolation Capacitance CI-O V = 0 V, f = 1 MHz 0.3 pF
*1 Test Circuit for Switching Time
Pulse Input
Input monitor monitorV
O
V
L
R
L
I
F
R
in
t
on
t
off
10%
90%
Input
0
Output
V
O
= 5 V
50%
*2 The turn-on time and turn-off time are specified as input-pulse width ≥ 1.0 ms.
Be aware that when the device operates with an input-pulse width less than 1.0 ms, the turn-on time and turn-off
time will increase.
Preliminary Data Sheet PN10725EJ01V0DS
4
