OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IRLBA1304PPBF

P1-P3P4-P6P7-P8
IRLBA1304
HEXFET
®
Power MOSFET
The HEXFET
®
is the
most popular power MOSFET in the world.
This particular HEXFET
®
is in the Super220
TM
and has
the same outline and
pinout as the industry standard TO-220. It has increased current handling
capability over both the TO-220 and the much larger TO-247 package. This
makes it ideal to reduce component count in multiparalled TO-220 applications,
reduce system power dissipation, upgrade existing designs or have TO-247
performance in a TO-220 outline. This package has also been designed to meet
automotive qualification standard Q101.
S
D
G
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 185, pkg limited to 95A*
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 130, pkg limited to 95A* A
I
DM
Pulsed Drain Current 740
P
D
@T
C
= 25°C Power Dissipation 300 W
Linear Derating Factor 2.0 W/°C
V
GS
Gate-to-Source Voltage ± 16 V
E
AS
Single Pulse Avalanche Energy 1160 mJ
I
AR
Avalanche Current 100 A
E
AR
Repetitive Avalanche Energy 30 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Recommended clip force 20 N
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.5
R
θCS
Case-to-Sink, Flat, Greased Surface 0.5 ––– °C/W
R
θJA
Junction-to-Ambient ––– 58
Thermal Resistance
V
DSS
= 40V
R
DS(on)
= 0.004Ω
I
D
= 185A
l Logic-Level Gate Drive
l Ultra Low On-Resistance
l Same outline as TO-220
l 50% greater current in typ.
application conditions vs. TO-220
l Fully Avalanche Rated
● Purchase IRLBA1304/P for solder plated option.
Description
9/14/99
www.irf.com 1
Super - 220
* Current capability in normal application, see Fig.9.
PD- 91842A
IRLBA1304
2 www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ 110A, di/dt ≤ 170A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Notes:
Starting T
J
= 25°C, L = 230µH
R
G
= 25Ω, I
AS
= 100A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 110A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 100 150 ns T
J
= 25°C, I
F
= 110A
Q
rr
Reverse RecoveryCharge ––– 250 380 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
185*
740
A
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.043 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.0040 V
GS
= 10V, I
D
= 110A
––– ––– 0.0065 V
GS
= 4.5V, I
D
= 93
V
GS(th)
Gate Threshold Voltage 1.0 ––– ––– V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 120 ––– ––– S V
DS
= 25V, I
D
= 110A
––– ––– 25
µA
V
DS
= 40V, V
GS
= 0V
––– ––– 250 V
DS
= 32V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 16V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
V
GS
= -16V
Q
g
Total Gate Charge ––– ––– 140 I
D
= 110A
Q
gs
Gate-to-Source Charge ––– ––– 39 nC V
DS
= 32V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 79 V
GS
= 4.5V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 21 ––– V
DD
= 20V
t
r
Rise Time ––– 350 ––– I
D
= 110A
t
d(off)
Turn-Off Delay Time ––– 45 ––– R
G
= 0.9Ω
t
f
Fall Time ––– 103 ––– R
D
= 0.18Ω,See Fig. 10
Between lead,
––– –––
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 7660 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 2150 ––– pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 460 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
nH
I
GSS
S
D
G
L
S
Internal Source Inductance ––– 5.0 –––
R
DS(on)
Static Drain-to-Source On-Resistance
L
D
Internal Drain Inductance 2.0
I
DSS
Drain-to-Source Leakage Current
Ω
IRLBA1304
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
1000
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
V , Drain-to-Source Volta
g
e (V)
I , Drain-to-Source Current (A)
DS
D
2.5V
0.1
1
10
100
1000
2.0 4.0 6.0 8.0 10.0
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 175 C
J
°
10
100
1000
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 175 C
J
°
TOP
BOTTOM
VGS
15V
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
V , Drain-to-Source Volta
g
e (V)
I , Drain-to-Source Current (A)
DS
D
2.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
170A
P1-P3P4-P6P7-P8

IRLBA1304PPBF

Mfr. #:
Buy IRLBA1304PPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 40V 185A SUPER-220
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet