H11B815S

©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
August 2005
H11B815 Rev. 1.0.1
H11B815 4-Pin Photodarlington Optocoupler
H11B815
4-Pin Photodarlington Optocoupler
Description
The H11B815 consists of a gallium arsenide infrared emitting
diode driving a silicon Darlington phototransistor in a 4-pin dual
in-line package.
Features
Compact 4-pin package
Current Transfer Ratio: 600% minimum (at I
F
= 1 mA)
High isolation voltage between input and output (5300
VRMS)
UL recognized (File # E90700)
Applications
Power Supply Monitors
Relay Contact Monitor
Telephone/Telegraph Line Receiver
Twisted Pair Line Receiver
Digital Logic/Digital Logic
PackageSchematic
4
1
4
1
1
4
1
2
4
3EMITTER
COLLECTORANODE
CATHODE
2
www.fairchildsemi.com
H11B815 Rev. 1.0.1
H11B815 4-Pin Photodarlington Optocoupler
Absolute Maximum Ratings
(No derating required up to 85°C)
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
Parameter Symbol Value Units
TOTAL DEVICE
Storage Temperature T
STG
-55 to +150 °C
Operating Temperature T
OPR
-55 to +100 °C
Lead Solder Temperature T
SOL
260 for 10 sec °C
Total Device Power Dissipation @ T
A
= 25°C P
D
250 mW
EMITTER
DC/Average Forward Input Current I
F
50 mA
Reverse Input Voltage V
R
6V
Forward Current - Peak (1µs pulse, 300pps) I
F
(pk) 1 A
LED Power Dissipation @ T
A
= 25°C P
D
70 mW
Derate above 25°C 1.33 mW/°C
DETECTOR
Collector-Emitter Voltage V
CEO
35 V
Emitter-Collector Voltage V
ECO
6V
Continuous Collector Current I
C
80 mA
Detector Power Dissipation @ T
A
= 25°C P
D
150 mW
Derate above 25°C 2.0 mW/°C
Parameter Test Conditions Symbol Min Typ** Max Unit
EMITTER
Input Forward Voltage (I
F
= 20 mA) V
F
1.2 1.50 V
Reverse Leakage Current (V
R
= 6.0 V) I
R
0.001 10 µA
DETECTOR
Collector-Emitter Breakdown Voltage (I
C
= 1.0 mA, I
F
= 0) BV
CEO
35 60 V
Emitter-Collector Breakdown Voltage (I
E
= 100 µA, I
F
= 0) BV
ECO
68 V
Collector-Emitter Dark Current (V
CE
= 10 V, I
F
= 0) I
CEO
0.005 1 µA
Capacitance (V
CE
= 0 V, f = 1 MHz) C
CE
8pF
3
www.fairchildsemi.com
H11B815 Rev. 1.0.1
H11B815 4-Pin Photodarlington Optocoupler
Transfer Characteristics
Isolation Characteristics
** All typicals at TA = 25°C
DC Characteristic Test Conditions Symbol Min Typ** Max Units
Current Transfer Ratio, Collector-Emitter (I
F
= 1 mA, V
CE
= 2 V) CTR 600 7,500 %
Saturation Voltage (I
F
= 20 mA, I
C
= 5 mA) V
CE(sat)
0.8 1.0 V
Rise Time (non saturated) (I
C
= 10 mA, V
CE
= 2 V, R
L
= 100V) t
r
300 µs
Fall Time (non saturated) (I
C
= 10 mA, V
CE
= 2 V, R
L
= 100V) t
f
250 µs
Characteristic Test Conditions Symbol Min Typ** Max Units
Input-Output Isolation Voltage (I
I-O
[ 1 µA, 1 min.) V
ISO
5000 Vac(rms)
Isolation Resistance (V
I-O
= 500 VDC) R
ISO
10
11
Isolation Capacitance (V
I-O
= &, f = 1 MHz) C
ISO
0.5 pf

H11B815S

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
OPTOISOLATOR 5KV DARLINGTON 4SMD
Lifecycle:
New from this manufacturer.
Delivery:
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