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MJ15004G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 16
1 Publication Order Number:
MJ15003/D
MJ15003 (NPN),
MJ15004 (PNP)
Complementary Silicon
Power Transistors
The MJ15003 and MJ15004 are power transistors designed for high
power audio, disk head positioners and other linear applications.
Features
• High Safe Operating Area
• For Low Distortion Complementary Designs
• High DC Current Gain
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
140 Vdc
Collector−Base Voltage V
CBO
140 Vdc
Emitter−Base Voltage V
EBO
5 Vdc
Collector Current − Continuous I
C
20 Adc
Base Current − Continuous I
B
5 Adc
Emitter Current − Continuous I
E
25 Adc
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
250
1.43
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +200 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
0.70 °C/W
Maximum Lead Temperature for Soldering
Purposes 1/16″ from Case for v 10 secs
T
L
265 °C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
20 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
140 VOLTS, 250 WATTS
Device Package Shipping
ORDERING INFORMATION
TO−204AA
(Pb−Free)
MJ15004G
MJ15003G TO−204AA
(Pb−Free)
100 Units/Tray
100 Units/Tray
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
MJ1500x = Device Code
x = 3 or 4
G= Pb−Free Package
A = Location Code
YY = Year
WW = Work Week
MEX = Country of Orgin
MJ1500xG
AYYWW
MEX
1
2
3
SCHEMATIC
1
BASE
EMITTER 2
CASE 3
1
BASE
EMITTER 2
CASE 3
PNP
NPN
MJ15003 (NPN), MJ15004 (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (Note 1)
(I
C
= 200 mAdc, I
B
= 0)
V
CEO(sus)
140 − Vdc
Collector Cutoff Current
(V
CE
= 140 Vdc, V
BE(off)
= 1.5 Vdc)
(V
CE
= 140 Vdc, V
BE(off)
= 1.5 Vdc, T
C
= 150°C)
I
CEX
−
−
100
2
mAdc
mAdc
Collector Cutoff Current
(V
CE
= 140 Vdc, I
B
= 0)
I
CEO
− 250
mAdc
Emitter Cutoff Current
(V
EB
= 5 Vdc, I
C
= 0)
I
EBO
− 100
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 50 Vdc, t = 1 s (non repetitive))
(V
CE
= 100 Vdc, t = 1 s (non repetitive))
I
S/b
5.0
1.0
−
−
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 5 Adc, V
CE
= 2 Vdc)
h
FE
25 150 −
Collector Emitter Saturation Voltage
(I
C
= 5 Adc, I
B
= 0.5 Adc)
V
CE(sat)
− 1.0 Vdc
Base Emitter On Voltage
(I
C
= 5 Adc, V
CE
= 2 Vdc)
V
BE(on)
− 2.0 Vdc
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f
test
= 0.5 MHz)
f
T
2.0 − MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
c
ob
− 1000 pF
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
TYPICAL CHARACTERISTICS MJ15003G (NPN)
Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
1001010.1
10
100
1001010.1
0
0.1
0.2
0.3
0.4
0.5
0.7
0.8
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLL−EMIT SATURATION
VOLTAGE (V)
150°C
−55°C
25°C
V
CE
= 2 V
0.6
150°C
−55°C
25°C
IC/IB = 10
MJ15003 (NPN), MJ15004 (PNP)
http://onsemi.com
3
TYPICAL CHARACTERISTICS MJ15003G (NPN)
Figure 3. Base−Emitter Saturation Voltage Figure 4. Safe Operating Area
I
C
, COLLECTOR CURRENT (A) V
CE
, COLLECTOR EMITTER VOLTAGE (V)
1001010.1
0
0.2
0.4
0.6
0.8
1.0
1.4
1.6
1,000100101
0.1
1
10
100
V
BE(sat)
, BASE−EMIT SATURATION
VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
1.2
150°C
−55°C
25°C
IC/IB = 10
100 mSec
1.0 Sec
TYPICAL CHARACTERISTICS MJ15004G (PNP)
Figure 5. DC Current Gain Figure 6. Collector−Emitter Saturation Voltage
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
1001010.1
1
10
100
1,000
1001010.1
0
0.1
0.2
0.4
0.6
0.7
0.8
1.0
Figure 7. Base−Emitter Saturation Voltage Figure 8. Safe Operating Area
I
C
, COLLECTOR CURRENT (mA) V
CE
, COLLECTOR EMITTER VOLTAGE (V)
1010.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1,000100101
0.1
1
10
100
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLL−EMIT SATURATION
VOLTAGE (V)
V
BE(sat)
, BASE−EMIT SATURATION
VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
150°C
−55°C
25°C
V
CE
= 2 V
0.3
0.5
0.9
150°C
−55°C
25°C
IC/IB = 10
150°C
−55°C
25°C
IC/IB = 10
100 mSec
1.0 Sec
P1-P3P4-P4

MJ15004G

Mfr. #:
Buy MJ15004G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 20A 140V 250W PNP
Lifecycle:
New from this manufacturer.
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