SIRA12DP-T1-GE3 Datasheet SIRA12DP-T1-GE3 | P1-P3

SiRA12DP

www.vishay.com

Vishay Siliconix

Work-In-Progress

SPending-Rev. B, 22-Sep-16

1

Document Number: 63786

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 30 V (D-S) MOSFET

FEATURES

• TrenchFET

®

Gen IV power MOSFET

• 100 % R

g

and UIS tested

• Material categorization: 

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• High power density DC/DC

• Synchronous rectification

• VRMs and embedded DC/DC

Notes

a. Based on T

C

= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/doc?73257

). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 70 °C/W.

g. Package limited.

PRODUCT SUMMARY

V

DS

(V) 30

R

DS(on)

max. (:) at V

GS

= 10 V 0.0043

R

DS(on)

max. (:) at V

GS

= 4.5 V 0.0060

Q

g

typ. (nC) 13.6

I

D

(A)

a, g

60

Configuration Single

PowerPAK

®

SO-8 Single

Top View

1

6.15 mm

5.15 mm

Bottom View

4

G

3

S

2

S

1

S

D

8

D

6

D

7

D

5

N-Channel MOSFET

G

D

S

ORDERING INFORMATION

Package PowerPAK SO-8

Lead (Pb)-free and halogen-free SiRA12DP-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage V

DS

30

V

Gate-source voltage V

GS

+20, -16

Continuous drain current (T

J

= 150 °C)

T

C

= 25 °C

I

D

60

g

A

T

C

= 70 °C 53

g

T

A

= 25 °C 25

b, c

T

A

= 70 °C 20

b, c

Pulsed drain current (t = 300 μs) I

DM

90

Continuous source-drain diode current

T

C

= 25 °C

I

S

25

g

T

A

= 25 °C 3.8

b, c

Single pulse avalanche current

L = 0.1 mH

I

AS

15

Single pulse avalanche energy E

AS

11 mJ

Maximum power dissipation

T

C

= 25 °C

P

D

31

W

T

C

= 70 °C 20

T

A

= 25 °C 4.5

b, c

T

A

= 70 °C 2.9

b, c

Operating junction and storage temperature range T

J

, T

stg

-55 to 150

°C

Soldering recommendations (peak temperature)

d, e

260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT

Maximum junction-to-ambient

b, f

t d 10 s R

thJA

25 28

°C/W

Maximum junction-to-case (drain) Steady state R

thJC

3.2 4

SiRA12DP

www.vishay.com

Vishay Siliconix

Work-In-Progress

SPending-Rev. B, 22-Sep-16

2

Document Number: 63786

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width d 300 μs, duty cycle d 2 %.

b. Guaranteed by design, not subject to production testing.

c. T

C

= 25 °C; expected voltage stress during 100 % UIS test. Production data log is not available.



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-source breakdown voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 30 - -

V

Drain-source breakdown voltage

(transient)

c

V

DSt

V

GS

= 0 V, I

D(aval)

= 15 A, t

transcient

d 50 ns 36 - -

V

DS

temperature coefficient 'V

DS

/T

J

I

D

= 250 μA

-16-

mV/°C

V

GS(th)

temperature coefficient 'V

GS(th)

/T

J

--5-

Gate-source threshold voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 1.1 - 2.2 V

Gate-source leakage I

GSS

V

DS

= 0 V, V

GS

= +20 V, -16 V - - ± 100 nA

Zero gate voltage drain current I

DSS

V

DS

= 30 V, V

GS

= 0 V - - 1

μA

V

DS

= 30 V, V

GS

= 0 V, T

J

= 55 °C - - 10

On-state drain current

a

I

D(on)

V

DS

t 5 V, V

GS

= 10 V 25 - - A

Drain-source on-state resistance

a

R

DS(on)

V

GS

= 10 V, I

D

= 10 A - 0.0032 0.0043

:

V

GS

= 4.5 V, I

D

= 7 A - 0.0044 0.0060

Forward transconductance

a

g

fs

V

DS

= 10 V, I

D

= 10 A - 51 - S

Dynamic

b

Input capacitance C

iss

V

DS

= 15 V, V

GS

= 0 V, f = 1 MHz

- 2070 -

pFOutput capacitance C

oss

- 600 -

Reverse transfer capacitance C

rss

-51-

C

rss

/C

iss

ratio - 0.025 0.050

Total gate charge Q

g

V

DS

= 15 V, V

GS

= 10 V, I

D

= 10 A - 29.5 45

nCV

DS

= 15 V, V

GS

= 4.5 V, I

D

= 10 A

-13.621

Gate-source charge Q

gs

-5.2-

Gate-drain charge Q

gd

-2.6-

Output charge Q

oss

V

DS

= 15 V, V

GS

= 0 V - 16 -

Gate resistance R

g

f = 1 MHz 0.3 1.7 3.4 :

Turn-on delay time t

d(on)

V

DD

= 15 V, R

L

= 1.5 :

I

D

# 10 A, V

GEN

= 10 V, R

g

= 1 :

-1020

ns

Rise time t

r

-1020

Turn-off delay time t

d(off)

-2550

Fall time t

f

-1020

Turn-on delay time t

d(on)

V

DD

= 15 V, R

L

= 1.5 :

I

D

# 10 A, V

GEN

= 4.5 V, R

g

= 1 :

-2040

Rise time t

r

-1530

Turn-off delay time t

d(off)

-2245

Fall time t

f

-1020

Drain-Source Body Diode Characteristics

Continuous source-drain diode current I

S

T

C

= 25 °C - - 25

A

Pulse diode forward current

a

I

SM

--80

Body diode voltage V

SD

I

S

= 10 A - 0.86 1.2 V

Body diode reverse recovery time t

rr

I

F

= 10 A, dI/dt = 100 A/μs,

T

J

= 25 °C

-2755ns

Body diode reverse recovery charge Q

rr

-1530nC

Reverse recovery fall time t

a

-13-

ns

Reverse recovery rise time t

b

-14-

SiRA12DP

www.vishay.com

Vishay Siliconix

Work-In-Progress

SPending-Rev. B, 22-Sep-16

3

Document Number: 63786

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

10

20

30

40

50

60

0.0 0.5 1.0 1.5 2.0

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

V

GS

= 10 V thru 4 V

V

GS

= 3 V

0.002

0.003

0.004

0.005

0.006

0 10 20 30 40 50 60

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

V

GS

= 4.5 V

V

GS

= 10 V

0

2

4

6

8

10

0 6 12 18 24 30

V

GS

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

DS

= 24 V

V

DS

= 15 V

V

DS

= 7.5 V

I

D

= 10 A

0

4

8

12

16

20

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= 25 °C

T

C

= 125 °C

T

C

= -55 °C

0

400

800

1200

1600

2000

2400

0 5 10 15 20 25 30

C - Capacitance (pF)

V

DS

- Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50 - 25 0 25 50 75 100 125 150

R

DS(on)

- On-Resistance (Normalized)

T

J

- Junction Temperature (°C)

V

GS

= 4.5 V

I

D

= 10 A

V

GS

= 10 V

SIRA12DP-T1-GE3

SIRA12DP-T1-GE3

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