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IRF1407PBF
P1-P3
P4-P6
P7-P9
IRF1407PbF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
V
DS
, D
rai
n-t
o-Source V
oltage (
V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
=
C
gs
+ C
gd
, C
ds
S
H
O
R
T
E
D
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0
40
80
120
160
200
0
3
6
9
12
15
Q , T
ot
al
Gate Charge (nC
)
V , Gate-t
o-Source Volt
age (V)
G
GS
I
=
D
78A
V
=
15V
DS
V
=
37V
DS
V
=
60V
DS
0.0
1.0
2.0
3.0
V
SD
, S
ource-
toD
rai
n Volt
age (V
)
0.10
1.00
10.00
100.00
1000.00
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
V
GS
= 0V
1
10
100
1000
V
DS
, D
rai
n-t
oSource Vol
tage (V
)
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc =
25°C
Tj
= 175°C
Si
ngle Pul
se
1msec
10msec
OPERATION IN THIS AREA
LIM
ITED BY R
DS
(on)
100µsec
IRF1407PbF
www.irf.com
5
Fig 9.
Maximum Drain Current vs.
Case Temperature
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(
off)
t
f
V
DS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 10a.
Switching Time Test Circuit
Fig 10b.
Switching Time Waveforms
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
25
50
75
100
125
150
175
0
20
40
60
80
100
120
140
T ,
Cas
e Temp
er
at
ur
e
( C)
I ,
Drain C
urrent
(A)
°
C
D
LI
MI
TED
BY
PACKAG
E
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
No
t
e
s
:
1. Du
ty fac
tor D =
t / t
2. Peak
T
=
P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rec
tangul
ar Pul
s
e Durati
on (
sec
)
Therm
al Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D =
0.50
SING
LE PULSE
(TH
ERMAL RESPO
N
SE)
IRF1407PbF
6
www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T
.
V
DS
I
D
I
G
3mA
V
GS
.3
µ
F
50K
Ω
.2
µ
F
12V
Current
Regulator
Same
Type
as
D.U.T
.
Current
Sampling
Resistors
+
-
10 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.0
1
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
Fig 14.
Threshold Voltage vs. Temperature
25
50
75
100
125
150
175
0
130
260
390
520
650
Star
ti
ng
T ,
Junc
t
i
on Tem
p
er
at
ur
e
( C)
E , Singl
e Pulse Av
alanc
he Energy
(mJ)
J
AS
°
I
D
TOP
BOT
T
O
M
32A
55A
78A
-75
-50
-2
5
0
25
50
75
100
125
150
175
200
T
J
, T
emper
atur
e ( °
C )
1.5
2.0
2.5
3.0
3.5
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
P1-P3
P4-P6
P7-P9
IRF1407PBF
Mfr. #:
Buy IRF1407PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 75V 130A 7.8mOhm 160nC
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
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IRF1407PBF