MTM232230L

Silicon MOSFETs (Small Signal)
Publication date: Februrary 2006 SJF00050BED 1
MTM23223
Silicon N-channel MOSFET
For switching circuits
Features
Low voltage drive (2.5 V, 4 V)
Realization of low on-resistance, using extremely fine process
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Drain-source surrender voltage
V
DSS
20 V
Gate-source surrender voltage
V
GSS
±10
V
Drain current
I
D
4.5 A
Peak drain current
*
1
I
DP
18 A
Power dissipation
*
2
P
D
500 mW
Channel temperature
T
ch
150
°C
Storage temperature
T
stg
55 to +150
°C
Note)
*
1 : Pulse width 10 µs, Duty Cycle 1%
*
2 : Measuring on ceramic substrate at 40 mm × 38 mm × 0.1 mm
Absolute maximum rating without heat sink for P
D
is 150 mW
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Drain-source surrender voltage
V
DSS
I
D
= 1 mA, V
GS
= 0 20 V
Drain-source cutoff current
I
DSS
V
DS
= 20 V, V
GS
= 0 1.0
µA
Gate-source cutoff current
I
GSS
V
GS
= ±8 V, V
DS
= 0
±10 µA
Gate threshold voltage
V
TH
I
D
= 1.0 mA, V
DS
= 10.0 V 0.4 0.85 1.3 V
Drain-source ON resistance
*
1
R
DS(on)
I
D
= 1.0 A, V
GS
= 4.0 V 20 28
m
I
D
= 0.6 A, V
GS
= 2.5 V 26 40
Forward transfer admittance
*
1
Y
fs
I
D
= 1.0 A, V
DS
= 10 V, f = 1 kHz 3.5 S
Short-circuit forward transfer capacitance
(Common source)
C
iss
V
DS
= 10 V, V
GS
= 0, f = 1 MHz
1
200 pF
Short-circuit output capacitance
(Common source)
C
oss
85 pF
Reverse transfer capacitance (Common source)
C
rss
80 pF
Turn-on time
*
2
t
on
V
DD
= 10 V, V
GS
= 0 V to 4 V, I
D
= 1 A 16 ns
Turn-off time
*
2
t
off
V
DD
= 10 V, V
GS
= 4 V to 0 V, I
D
= 1 A 220 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1 : Pulse measurement: Pulse width < 300 µs, Duty Cycle < 2%
*
2 : t
on
, t
off
measurement circuit
V
CC
= 10 V
P
W
= 10 µs
Duty Cycle 1%
I
D
= 1 A
R
L
= 10
V
OUT
V
IN
D
G
S
V
IN
50
t
on
t
off
4 V
0 V
V
IN
V
OUT
10%
90%
90%
10%
Marking Symbol: BK
Unit: mm
1: Gate
2: Source
3: Drain SMini3-G1 Package
2.1±0.1
1.3±0.1
0.3
+0.1
–0.0
2.0±0.2
1.25±0.10 (0.425)
1
3
2
(0.65)
(0.65)
0.2±0.1
0.9±0.10 to 0.1
0.9
+0.2
–0.1
0.15
+0.10
–0.05
5°
10°
This product complies with the RoHS Directive (EU 2002/95/EC).
Maintenance/
Discontinued
Please visit following URL about latest information.
http://panasonic.co.jp/semicon/e-index.html
MTM23223
2 SJF00050BED
P
D
T
a
I
D
V
GS
R
DS(on)
V
GS
R
DS(on)
I
D
C
iss
, C
rss
, C
oss
V
DS
0
40
80
120 160
0
200
400
600
MTM23223_ P
D
-T
a
Ceramic substrate at
40 mm × 38 mm × 0.1 mm
Wi
thout a heat sink
Drain power dissipation P
D
(mW)
Ambient temperature T
a
(°C)
0
0.4 0.8 1.2 1.6
10
3
10
1
10
10
3
MTM23223_ I
D
-V
GS
V
DS
= 10.0 V
Drain current I
D
(mA)
Gate-source voltage V
GS
(V)
1 3 6
10
2
1
10
1
I
D
= 1.0 A
MTM23223_ R
DS(on)
-V
GS
Drain-source ON resistance R
DS(on)
()
Gate-source voltage V
GS
(V)
10
2
10
1
1
10
2
1
10
1
V
GS
= 2.5 V
4.0 V
MTM23223_ R
DS(on)
-I
D
Drain-source ON resistance R
DS(on)
()
Drain current I
D
(A)
0 8 16
0
400
800
1
200
1
600
C
iss
C
rss
C
oss
MTM23223_ C
iss
, C
rss
, C
oss
-V
DS
Drain-source voltage V
DS
(V)
Short-circuit forward transfer capacitance (Common source) C
iss
,
Reverse transfer capacitance (Common source) C
rss
,
Short-circuit output capacitance (Common source) C
oss
(pF)
This product complies with the RoHS Directive (EU 2002/95/EC).
Maintenance/
Discontinued
Please visit following URL about latest information.
http://panasonic.co.jp/semicon/e-index.html

MTM232230L

Mfr. #:
Manufacturer:
Panasonic
Description:
MOSFET N-CH 20V 4.5A SMINI-3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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