SSM6N39TU
2014-03-01
1
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM6N39TU
○ Power Management Switch Applications
○ High-Speed Switching Applications
• 1.5-V drive
• N-ch 2-in-1
• Low ON-resistance: R
on
= 247mΩ (max) (@V
GS
= 1.5 V)
R
on
= 190mΩ (max) (@V
GS
= 1.8 V)
R
on
= 139mΩ (max) (@V
GS
= 2.5 V)
R
on
= 119mΩ (max) (@V
GS
= 4.0 V)
Absolute Maximum Ratings (Ta = 25 °C) (Q1,Q2 Common)
Characteristic Symbol Rating Unit
Drain-source voltage V
DSS
20 V
Gate-source voltage V
GSS
± 10 V
DC I
D
1.6
Drain current
Pulse I
DP
3.2
A
Drain power dissipation P
D
(Note1) 500 mW
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions
(i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
Note1: Mounted on an FR4 board. (total dissipation)
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm
2
)
Unit: mm
0.3-0.05
6
1.7±0.1
2.1±0.1
1.3±0.1
1
2
0.650.65
3
2.0±0.1
5
4
0.7±0.05
+0.1
0.166±0.05
JEDEC ―
JEITA ―
TOSHIBA 2-2T1B
Weight: 7.0mg (typ.)
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
6.Drain1
UF6
Start of commercial production
2008-01
