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FCB260N65S3

P1-P3P4-P6P7-P9P10-P11
© Semiconductor Components Industries, LLC, 2017
July, 2018 − Rev. 2
1 Publication Order Number:
FCB260N65S3/D
FCB260N65S3
Power MOSFET, N-Channel,
SUPERFET
)
III, Easy Drive,
650 V, 12 A, 260 mW
Description
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advance technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET
is very suitable for various power system miniaturization and higher
efficiency.
Features
• 700 V @ T
J
= 150°C
• Typ. R
DS(on)
= 222 mW
• Ultra Low Gate Charge (Typ. Q
g
= 24 nC)
• Low Effective Output Capacitance (Typ. C
oss(eff.)
= 248 pF)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Telecom / Server Power Supplies
• Industrial Power Supplies
• UPS / Solar
D
2
−PAK
CASE 418AJ
www.onsemi.com
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Data Code (Year & Week)
&K = Lot
FCB260N65S3 = Specific Device Code
MARKING DIAGRAM
D
S
G
POWER MOSFET
G
S
D
V
DSS
R
DS(ON)
MAX I
D
MAX
650 V
260 mW @ 10 V
12 A
$Y&Z&3&K
FCB
260N65S3
FCB260N65S3
www.onsemi.com
2
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C, Unless otherwise specified)
Symbol
Parameter Value Unit
V
DSS
Drain to Source Voltage 650 V
V
GSS
Gate to Source Voltage
DC ±30 V
AC (f > 1 Hz) ±30 V
I
D
Drain Current
Continuous (T
C
= 25°C) 12
A
Continuous (T
C
= 100°C) 7.6
I
DM
Drain Current Pulsed (Note 1) 30 A
E
AS
Single Pulsed Avalanche Energy (Note 2) 57 mJ
I
AS
Avalanche Current (Note 1) 2.3 A
E
AR
Repetitive Avalanche Energy (Note 1) 0.9 mJ
dv/dt
MOSFET dv/dt 100
V/ns
Peak Diode Recovery dv/dt (Note 3) 20
P
D
Power Dissipation
(T
C
= 25°C) 90 W
Derate Above 25°C 0.72 W/°C
T
J
, T
STG
Operating and Storage Temperature Range −55 to +150 °C
T
L
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s 300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I
AS
= 2.3 A, R
G
= 25 W, starting T
J
= 25°C.
3. I
SD
≤ 6 A, di/dt ≤ 200 A/ms, V
DD
≤ 400 V, starting T
J
= 25°C.
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
R
q
JC
Thermal Resistance, Junction to Case, Max. 1.39 _C/W
R
q
JA
Thermal Resistance, Junction to Ambient, Max. (Note 4) 40
4. Device on 1 in
2
pad 2 oz copper pad on 1.5 x 1.5 in. board of FR−4 material.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Top Marking Package Reel Size Tape Width Shipping
†
FCB260N65S3 FCB260N65S3 D
2
−PAK 330 mm 24 mm 800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
FCB260N65S3
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Symbol
Parameter Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
BV
DSS
Drain to Source Breakdown Voltage
V
GS
=0V, I
D
= 1 mA, T
J
=25_C
650 − − V
V
GS
=0V, I
D
= 1 mA, T
J
= 150_C
700 − − V
DBV
DSS
/DT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 1 mA, Referenced to 25_C
− 0.66 −
V/_C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 650 V, V
GS
=0V − − 1 mA
V
DS
= 520 V, T
C
= 125_C
− 0.77 −
I
GSS
Gate to Body Leakage Current V
GS
= ±30 V, V
DS
=0V − − ±100 nA
ON CHARACTERISTICS
V
GS(th)
Gate Threshold Voltage V
GS
=V
DS
, I
D
= 1.2 mA 2.5 − 4.5 V
R
DS(on)
Static Drain to Source On Resistance V
GS
=10V, I
D
= 6 A − 222 260
mW
g
FS
Forward Transconductance V
DS
=20V, I
D
=6A − 7.4 − S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 400 V, V
GS
= 0 V, f = 1 MHz
− 1010 − pF
C
oss
Output Capacitance − 25 − pF
C
oss(eff.)
Effective Output Capacitance V
DS
= 0 V to 400 V, V
GS
=0V − 248 − pF
C
oss(er.)
Energy Related Output Capacitance V
DS
= 0 V to 400 V, V
GS
=0V − 33 − pF
Q
g(tot)
Total Gate Charge at 10 V
V
DS
= 400 V, I
D
= 6 A, V
GS
=10V
(Note 5)
− 24 − nC
Q
gs
Gate to Source Gate Charge − 6.1 − nC
Q
gd
Gate to Drain “Miller” Charge − 9.7 − nC
ESR Equivalent Series Resistance f = 1 MHz − 8.7 −
W
SWITCHING CHARACTERISTICS
t
d(on)
Turn-On Delay Time
V
DD
= 400 V, I
D
=6A,
V
GS
=10V, R
g
= 4.7 W
(Note 5)
− 18 − ns
t
r
Turn-On Rise Time − 18 − ns
t
d(off)
Turn-Off Delay Time − 49 − ns
t
f
Turn-Off Fall Time − 12 − ns
SOURCE-DRAIN DIODE CHARACTERISTICS
I
S
Maximum Continuous Source to Drain Diode Forward Current − − 12 A
I
SM
Maximum Pulsed Source to Drain Diode Forward Current − − 30 A
V
SD
Source to Drain Diode Forward Voltage V
GS
=0V, I
SD
=6A − − 1.2 V
t
rr
Reverse Recovery Time
V
GS
=0V, I
SD
=6A,
dI
F
/dt = 100 A/ms
− 251 − ns
Q
rr
Reverse Recovery Charge − 3.4 −
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Essentially independent of operating temperature typical characteristics.
P1-P3P4-P6P7-P9P10-P11

FCB260N65S3

Mfr. #:
Buy FCB260N65S3
Manufacturer:
ON Semiconductor
Description:
MOSFET SUPERFET3 650V D2PAK PKG
Lifecycle:
New from this manufacturer.
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