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T1235T-8I

P1-P3P4-P6P7-P9
Characteristics
T1235T-8I
4/9
DocID030976 Rev 2
1.1 Characteristics (curves)
Figure 2: Maximum power dissipation versus
on-state RMS current
Figure 3: On-state RMS current versus case
temperature
Figure 4: On-state RMS current versus ambient
temperature (free air convection)
Figure 5: Relative variation of thermal impedance
versus pulse duration
Figure 6: Relative variation of gate trigger voltage
and current versus junction temperature
(typical values)
Figure 7: Relative variation of holding current and
latching current versus junction temperature
(typical values)
0
2
4
6
8
10
12
14
16
18
0 2 4 6 8 10 12
P(W)
I
T(RMS)
(A)
α = 180°
180°
0
4
8
12
16
0 25 50 75 100 125 150
I
T(RMS)
(A)
T
c
(°C)
α = 180°
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 25 50 75 100 125 150
I
T(RMS)
(A)
T
a
(°C)
α = 180°
1.0E-02
1.0E-01
1.0E+00
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05
K = [Z
th
/R
th
]
t
p
(s)
Z
th(j-c)
Z
th(j-a)
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
I
GT
,V
GT
[T
j
] / I
GT
,V
GT
[T
j
= 25 °C]
T
j
(°C)
I
GT
Q3
V
GT
Q1-Q2-Q3
I
GT
Q1-Q2
-50 -25 0 150
0.0
0.5
1.0
1.5
25 50 75 100 125
I
H
,I
L
[T
j
] / I
H
,I
L
[T
j
= 25 °C]
T
j
(°C)
I
H
I
L
T1235T-8I
Characteristics
DocID030976 Rev 2
5/9
Figure 8: Surge peak on-state current versus
number of cycles
Figure 9: Non repetitive surge peak on-state
current for a sinusoidal pulse with width tp < 10 ms
Figure 10: On-state characteristics (maximum
values)
Figure 11: Relative variation of critical rate of
decrease of main current versus junction
temperature
Figure 12: Relative variation of static dV/dt
immunity versus junction temperature
Figure 13: Relative variation of leakage current
versus junction temperature for different values of
blocking voltage
0
50
100
1 10 100 1000
I
TSM
(A)
Number of cycles
Repetitive
T
c
= 114°C
Non repetitive
T
j
initial = 25 °C
t=20ms
O ne c yc le
10
100
1000
0.01 0.10 1.00 10.00
I
TSM
(A)
t (ms)
p
T initial=25 °C
j
I
TS M
dI/dt limitation:
100A/µs
1
10
100
0 1 2 3 4 5
I
TM
(A)
V
TM
(V)
T
j
max.
V
to
= 0.85 V
R
d
= 50 mΩ
T
j
= 150 °C
T
j
= 25 °C
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
25 50 75 100 125 150
(dl/dt)c [T
j
] / (dl/dt)c [T
j = 150 °C
]
T
j
(°C)
0
1
2
3
4
5
6
25 50 75 100 125 150
dV/dt [T
j
] / dV/dt [T
j = 150 °C
]
T
j
(°C)
V
D
= V
R
= 402 V
1.0E-03
1.0E-02
1.0E-01
1.0E+00
25 50 75 100 125 150
T
j
(°C)
V
DRM
= V
RRM
= 800 V
V
DRM
= V
RRM
= 600 V
*[T
j
max = 125 °C; V
DRM
, V
RRM
= 800 V]
[T
j
max = 150 °C; V
DRM
, V
RRM
= 600 V]
I
DRM
, I
RRM
at [T
j
] / I
DRM
, I
RRM
at [T
j max.
]*
Package information
T1235T-8I
6/9
DocID030976 Rev 2
2 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
ECOPACK
®
2 (Lead-free plating and Halogen free package compliance)
Lead-free package leads finishing
Halogen-free molding compound resin meets UL94 standard level V0.
Recommended torque (for package screwing assembly): 0.4 to 0.6 N·m
2.1 TO-220AB Insulated package information
Figure 14: TO-220AB Insulated package outline
P1-P3P4-P6P7-P9

T1235T-8I

Mfr. #:
Buy T1235T-8I
Manufacturer:
STMicroelectronics
Description:
Triacs 12 A Snubberless Triac
Lifecycle:
New from this manufacturer.
Delivery:
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