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NE68833-T1-A

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
SURFACE MOUNT NPN SILICON
HIGH FREQUENCY TRANSISTOR
NE688
SERIES
FEATURES
• LOW PHASE NOISE DISTORTION
• LOW NOISE: 1.5 dB at 2.0 GHz
• LOW VOLTAGE OPERATION
• LARGE ABSOLUTE MAXIMUM COLLECTOR
CURRENT: I
C MAX = 100 mA
• AVAILABLE IN SIX LOW COST PLASTIC SURFACE
MOUNT PACKAGE STYLES
• ALSO AVAILABLE IN CHIP FORM
39 (SOT 143 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
39R (SOT 143R STYLE)
DESCRIPTION
18 (SOT 343 STYLE)
PLEASE NOTE:PLEASE NOTE:
PLEASE NOTE:PLEASE NOTE:
PLEASE NOTE:
The following part numbersThe following part numbers
The following part numbersThe following part numbers
The following part numbers
from this datasheet are notfrom this datasheet are not
from this datasheet are notfrom this datasheet are not
from this datasheet are not
recommended for new design.recommended for new design.
recommended for new design.recommended for new design.
recommended for new design.
Please call sales office forPlease call sales office for
Please call sales office forPlease call sales office for
Please call sales office for
details:details:
details:details:
details:
NE68818NE68818
NE68818NE68818
NE68818
NE68839NE68839
NE68839NE68839
NE68839
NE68839RNE68839R
NE68839RNE68839R
NE68839R
NEC's NE688 series of NPN epitaxial silicon transistors are
designed for low cost amplifier and oscillator applications. Low
noise figures, high gain and high current capability equate to
wide dynamic range and excellent linearity. NE688's low
phase noise distortion and high fT make it an excellent choice
for oscillator applications up to 5 GHz. The NE688 series is
available in six different low cost plastic surface mount pack-
age styles, and in chip form.
PART NUMBER
1
NE68818 NE68819 NE68830 NE68833 NE68839/39R
EIAJ
2
REGISTERED NUMBER 2SC5194 2SC5195 2SC5193 2SC5191 2SC5192/92R
PACKAGE OUTLINE 18 19 30 33 39
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
fT Gain Bandwidth Product at
VCE = 1V, IC = 3 mA, f = 2.0 GHz GHz 4 5 4.5 5 4 4.5 4 4.5 4 4.5
fT Gain Bandwidth Product at
VCE = 3V, IC = 20 mA, f = 2.0 GHz GHz 10 9.5 9 8.5 9
NFMIN Minimum Noise Figure at
VCE = 1 V, IC = 3 mA, f = 2.0 GHz dB 1.7 2.5 1.7 2.5 1.7 2.5 1.7 2.5 1.7 2.5
NFMIN Minimum Noise Figure at
VCE = 3 V, IC = 7 mA, f = 2.0 GHz dB 1.5 1.5 1.5 1.5 1.5
|S21E|
2
Insertion Power Gain at
VCE = 1V, IC = 3 mA, f = 2.0 GHz dB 3.0 4.0 3.0 4.0 2.5 3.5 2.5 3.5 4.0 4.5
|S21E|
2
Insertion Power Gain at
VCE = 3V, IC = 20 mA, f = 2.0 GHz dB 8.5 8 6.5 6.5 9
hFE Forward Current Gain
3
at
VCE = 1 V, IC = 3 mA 80 160 80 160 80 160 80 160 80 160
ICBO Collector Cutoff Current
at VCB = 5 V, IE = 0 mA nA 100 100 100 100 100
IEBO Emitter Cutoff Current
at VEB = 1 V, IC = 0 mA nA 100 100 100 100 100
CRE
4
Feedback Capacitance at
VCB = 1 V, IE = 0 mA, f = 1 MHz pF 0.65 0.8 0.7 0.8 0.75 0.85 0.75 0.85 0.65 0.8
PT Total Power Dissipation mW 150 125 150 200 200
RTH(J-A) Thermal Resistance
(Junction to Ambient) °C/W 833 1000 833 625 625
RTH(J-C) Thermal Resistance(Junction to Case) °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C)
3. Pulsed measurement, PW ≤ 350 µs, duty cycle ≤ 2%.
4. The emitter terminal should be connected to the ground terminal of
the 3 terminal capacitance bridge.
Notes:
1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
California Eastern Laboratories
SYMBOLS PARAMETERS UNITS RATINGS
VCBO Collector to Base Voltage V 9
VCEO Collector to Emitter Voltage V 6
V
EBO Emitter to Base Voltage V 2.0
I
C Collector Current mA 100
TJ Operating Junction
Temperature °C 150
TSTG Storage Temperature °C -65 to +150
NE688 SERIES
ABSOLUTE MAXIMUM RATINGS
1
(TA = 25°C)
TYPICAL PERFORMANCE CURVES (TA = 25°C)
200
100
0
50
100
150
Free Air
0
Free Air
150
100
50
0
0
50
100
150
NE68818, NE68830
D.C. POWER DERATING CURVE
NE68819
D.C. POWER DERATING CURVE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Total Power Dissipation, P
T
(mW)
Free Air
200
100
0
0
50 100
150
30
25
20
15
10
5
0
02.5
5
7
200 µA
180 µA
160 µA
140 µA
120 µA
100 µA
80 µA
60 µA
40 µA
I
B
= 20 µA
NE68833, NE68839
D.C. POWER DERATING CURVE
Total Power Dissipation, P
T
(mW)
Total Power Dissipation, P
T
(mW)
Ambient Temperature TA (°C)
Ambient Temperature TA (°C)
Ambient Temperature TA (°C) Collector to Emitter Voltage, VCE (V)
Collector Current, I
C
(mA)
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
NE688 SERIES
DC Current Gain, h
FE
Collector Current, IC (mA)
8
6
4
2
0
12 5
10
20 50
100
V
CE
= 1 V
V
CE
= 3 V
f = 2 GHz
Insertion Power Gain, |S
21e
|
2
(dB)
Collector Current, IC (mA)
f = 2 GHz
5
4
3
2
1
0
1
2
5
10
20
50
100
V
CE
= 1 V
V
CE
= 3 V
Noise Figure, NF (dB)
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE68833
NOISE FIGURE vs. COLLECTOR CURRENT
NE68833
INSERTION GAIN vs. COLLECTOR CURRENT
200
100
0
0.1
0.2
0.5
1
2510
20
50
100
V
CE
= 1 V
D.C. CURRENT GAIN vs.
COLLECTOR CURRENT
Collector Current, IC (mA)
Gain Bandwidth Product, f
T
(GHz)
f = 2 GHz
10
8
6
4
2
0
1
2
5
10
20
50
100
V
CE
= 1 V
V
CE
= 3 V
NE68839
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Collector Current, IC (mA)
V
CE
= 1 V
0 0.5
1
100
50
20
2
0.5
1
0.2
0.1
0.05
0.02
0.01
10
5
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Base to Emitter Voltage, VBE (V)
Feed-back Capacitance, C
RE
(pF)
Collector to Base Voltage, VCB (V)
1.0
0.5
0.1
1
5
10
20
f = 1 MHz
NE68830
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

NE68833-T1-A

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Manufacturer:
CEL
Description:
RF Bipolar Transistors NPN High Frequency
Lifecycle:
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