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BC817DS,115

P1-P3P4-P6P7-P8
2002 Nov 22 3
NXP Semiconductors Product data sheet
NPN general purpose double transistor BC817DS
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Notes
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
2. V
BE
decreases by approximately −2 mV/K with increasing temperature.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
note 1 208 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor
I
CBO
collector-base cut-off current V
CB
= 20 V; I
E
= 0 − − 100 nA
V
CB
= 20 V; I
E
= 0; T
j
= 150 °C − − 5 μA
I
EBO
emitter-base cut-off current V
EB
= 5 V; I
C
= 0 − − 100 nA
h
FE
DC current gain V
CE
= 1 V; I
C
= 100 mA; note 1 160 − 400
V
CE
= 1 V; I
C
= 500 mA; note 1 40 − −
V
CEsat
collector-emitter saturation voltage I
C
= 500 mA; I
B
= 50 mA; note 1 − − 700 mV
V
BE
base-emitter voltage V
CE
= 1 V; I
C
= 500 mA;
notes
1 and 2
− − 1.2 V
C
c
collector capacitance V
CB
= 10 V; I
E
= I
e
= 0; f = 1 MHz − 5 − pF
f
T
transition frequency V
CE
= 5 V; I
C
= 10 mA;
f
= 100 MHz
100 − − MHz
2002 Nov 22 4
NXP Semiconductors Product data sheet
NPN general purpose double transistor BC817DS
handbook, halfpage
0
500
100
200
300
400
MBL747
10
−1
11010
2
I
C
(mA)
h
FE
10
3
(3)
(1)
(2)
Fig.2 DC current gain as a function of collector
current; typical values.
V
CE
= 1 V.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
010
1000
0
200
400
600
800
2468
V
CE
(V)
I
C
(mA)
MBL748
(1) (2) (3) (4) (5)
(6)
(7)
(8)
(9)
(10)
Fig.3 Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= 15 mA.
(2) I
B
= 13.5 mA.
(3) I
B
= 12 mA.
(4) I
B
= 10.5 mA.
(5) I
B
= 9 mA.
(6) I
B
= 7.5 mA.
(7) I
B
= 6 mA.
(8) I
B
= 4.5 mA.
(9) I
B
= 3 mA.
(10) I
B
= 1.5 mA.
handbook, halfpage
10
3
10
2
10
MBL749
10
−1
110
I
C
(mA)
V
CEsat
(mV)
10
2
10
3
(1)
(2)
(3)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 10.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
200
1200
400
600
800
1000
MBL750
10
−1
110
I
C
(mA)
V
BE
(mV)
10
2
10
3
(1)
(2)
(3)
Fig.5 Base-emitter voltage as a function of
collector current; typical values.
V
CE
= 1 V.
(1) T
amb
= −55 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= 150 °C.
2002 Nov 22 5
NXP Semiconductors Product data sheet
NPN general purpose double transistor BC817DS
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
SOT457 SC-74
wBM
b
p
D
e
pin 1
index
A
A
1
L
p
Q
detail X
H
E
E
v M
A
AB
y
0 1 2 mm
scale
c
X
132
4
56
Plastic surface mounted package; 6 leads SOT45
7
UNIT
A
1
b
p
cD
E
H
E
L
p
Qywv
mm
0.1
0.013
0.40
0.25
3.1
2.7
0.26
0.10
1.7
1.3
e
0.95
3.0
2.5
0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2
0.33
0.23
A
1.1
0.9
97-02-28
01-05-04
P1-P3P4-P6P7-P8

BC817DS,115

Mfr. #:
Buy BC817DS,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS DOUBLE TAPE-7
Lifecycle:
New from this manufacturer.
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