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IRG4BC20FD-S

P1-P3P4-P6P7-P9P10-P11
IRG4BC20FD-S
4 www.irf.com
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
-60 -40 -20 0 20 40 60 80 100 120 140 160
1.0
2.0
3.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
°
CE
V = 15V
80 us PULSE WIDTH
GE
I = A4.5
C
I = A9
C
I = A18
C
25 50 75 100 125 150
0
4
8
12
16
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C
°
9.0 A
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
J DM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRG4BC20FD-S
www.irf.com 5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0 10 20 30 40 50
0.78
0.80
0.82
0.84
0.86
0.88
0.90
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 9.0A
CC
GE
J
C
°
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
°
R = 50Ohm
V = 15V
V = 480V
G
GE
CC
I = A
18
C
I = A
9
C
I = A
4.5
C
Ω
Ω
0 5 10 15 20 25 30
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V = 400V
I = 9.0A
CC
C
1 10 100
0
200
400
600
800
1000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies
g
e
c , ce
res
g
c
oes ce
g
c
C
ies
C
oes
C
res
9.0 A
IRG4BC20FD-S
6 www.irf.com
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
0.1
1
10
100
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
FM
F
Instantaneous Forward Current - I (A)
Forward Volta
g
e Drop - V
(
V
)
T = 150°C
T = 125°C
T = 25°C
J
J
J
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
0 4 8 12 16 20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I , Collector-to-emitter Current (A)
Total Switching Losses (mJ)
C
R = 50Ohm
T = 150 C
V = 480V
V = 15V
G
J
CC
GE
°
Ω
1
10
100
1 10 100 1000
V = 20V
T = 125 C
GE
J
o
V , Collector-to-Emitter Volta
g
e (V)
I , Collector-to-Emitter Current (A)
CE
C
SAFE OPERATING AREA
P1-P3P4-P6P7-P9P10-P11

IRG4BC20FD-S

Mfr. #:
Buy IRG4BC20FD-S
Manufacturer:
Infineon Technologies
Description:
IGBT 600V 16A 60W D2PAK
Lifecycle:
New from this manufacturer.
Delivery:
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