PMEG2020EH_EJ_4 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 04 — 15 January 2010 3 of 10
NXP Semiconductors
PMEG2020EH; PMEG2020EJ
20 V, 2 A very low V
F
MEGA Schottky barrier rectifiers
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
[1] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[4] Soldering point of cathode tab.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage - 20 V
I
F
forward current T
sp
≤ 55 °C-2A
I
FRM
repetitive peak forward current t
p
≤ 1 ms; δ≤0.5 - 7 A
I
FSM
non-repetitive peak forward
current
t
p
= 8 ms; square
wave
-9A
P
tot
total power dissipation T
amb
≤ 25 °C
PMEG2020EH
[1]
- 375 mW
[2]
- 830 mW
PMEG2020EJ
[1]
- 360 mW
[2]
- 830 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
PMEG2020EH
[1][2]
- - 330 K/W
[1][3]
- - 150 K/W
PMEG2020EJ
[1][2]
- - 350 K/W
[1][3]
- - 150 K/W
R
th(j-sp)
thermal resistance from
junction to solder point
[4]
PMEG2020EH - - 60 K/W
PMEG2020EJ - - 55 K/W
