BC368ZL1 Datasheet BC368ZL1, BC369ZL1, BC369G | P1-P3

September, 2005 − Rev. 5

1 Publication Order Number:

BC368/D

BC368 (NPN), BC369 (PNP)

Amplifier Transistors

Voltage and Current are Negative for

PNP Transistors

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage V

CEO

20 Vdc

Collector − Emitter Voltage V

CES

25 Vdc

Emitter − Base Voltage V

EBO

5.0 Vdc

Collector Current − Continuous I

C

1.0 Adc

Total Device Dissipation

@ T

A

= 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation

@ T

C

= 25°C

Derate above 25°C

P

D

1.5

12

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance,

Junction−to−Ambient

R

q

JA

200 °C/W

Thermal Resistance,

Junction−to−Case

R

q

JC

83.3 °C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

COLLECTOR

2

3

BASE

1

EMITTER

COLLECTOR

2

3

BASE

1

EMITTER

NPN PNP

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping

ORDERING INFORMATION

BC368 TO−92

TO−92

CASE 29

STYLE 14

5000 Units/Box

3

2

1

BC368ZL1 TO−92 2000/Ammo Box

BC369 TO−92 5000 Units/Box

BC369ZL1

TO−92 2000/Ammo Box

http://onsemi.com

MARKING DIAGRAMS

BC368ZL1G TO−92

(Pb−Free)

2000/Ammo Box

BC369ZL1G

TO−92

(Pb−Free)

2000/Ammo Box

BC36x = Device Code

x = 8 or 9

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

BC368G TO−92

(Pb−Free)

5000 Units/Box

BC369G TO−92

(Pb−Free)

5000 Units/Box

BC36

x

AYWW G

G

BC

36x

AYWW G

G

BC368 (NPN), BC369 (PNP)

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I

C

= 10 mA, I

B

= 0)

V

(BR)CEO

20 − − Vdc

Collector−Base Breakdown Voltage

(I

C

= 100 mA, I

E

= 0 )

V

(BR)CBO

25 − − Vdc

Emitter−Base Breakdown Voltage

(I

E

= 100 mA, I

C

= 0)

V

(BR)EBO

5.0 − − Vdc

Collector Cutoff Current

(V

CB

= 25 V, I

E

= 0)

(V

CB

= 25 V, I

E

= 0, T

J

= 150°C)

I

CBO

−

10

1.0

mAdc

Emitter Cutoff Current

(V

EB

= 5.0 V, I

C

= 0)

I

EBO

− − 10

mAdc

ON CHARACTERISTICS

DC Current Gain

(V

CE

= 10 V, I

C

= 5.0 mA)

(V

CE

= 1.0 V, I

C

= 0.5 A) BC368, 369

BC368−25

(V

CE

= 1.0 V, I

C

= 1.0 A)

h

FE

50

85

170

60

−

375

−

Bandwidth Product

(I

C

= 10 mA, V

CE

= 5.0 V, f = 20 MHz)

f

T

65 − − MHz

Collector−Emitter Saturation Voltage

(I

C

= 1.0 A, I

B

= 100 mA)

V

CE(sat)

− − 0.5 V

Base−Emitter On Voltage

(I

C

= 1.0 A, V

CE

= 1.0 V)

V

BE(on)

− − 1.0 V

BC368 (NPN), BC369 (PNP)

http://onsemi.com

3

I

C

, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

I

B

, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

I

C

, COLLECTOR CURRENT (mA)

Figure 3. “On” Voltages

160

40

0

V

R

, REVERSE VOLTAGE (VOLTS)

Figure 4. Temperature Coefficient

−0.8

I

C

, COLLECTOR CURRENT (mA)

Figure 5. Current−Gain — Bandwidth Product

C

obo

C

ibo

5.0

1.0

−2.4

−2.0

−1.2

V

CE

, COLLECTOR VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

VB

, TEMPERATURE COEFFICIENT (mV/ C)°θC, CAPACITANCE (pF)

1.0

0.8

0.6

0.4

0.2

0

0.01 0.1 10 1001.0

1.0

0.8

0.6

0.4

0.2

0

1.0 10 1000100

10

2.0

T

J

= 25°C

I

C

= 10 mA

T

J

= 25°C

V

BE(on)

@ V

CE

= 1.0 V

V

CE(sat)

@ I

C

/I

B

= 10

q

VB

for V

BE

C

ibo

h

FE

, CURRENT GAIN

200

20

100010 50 100

100

20

V

CE

= 1.0 V

T

J

= 25°C

70

50

200 500 0.02 0.05 0.2 0.5 2.0 5.0 20 50

50 mA

100 mA

250 mA

500 mA

1000 mA

2.0 5.0 20 50 200 500

−1.6

−2.8

1.0 10 10001002.0 5.0 20 50 200 500

120

80

15

3.0

20

4.0

25

5.0

T

J

= 25°C

C

obo

300

70

30

I

C

, COLLECTOR CURRENT (mA)

Figure 6. Capacitance

10 20 50

200

100

100 200 500

f

T

, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

50

1000

V

CE

= 10 V

T

J

= 25°C

f = 20 MHz

V

BE(sat)

@ I

C

/I

B

= 10

BC368ZL1

BC368ZL1

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