RN2507~RN2509
2010-05-21
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2507,RN2508,RN2509
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
z Including two devices in SMV (super mini type with 5 leads)
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN1507 to RN1509
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings
(Ta = 25
°
C) (Q1, Q2 Common)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
−50 V
Collector-emitter voltage
RN2507 to RN2509
V
CEO
−50 V
RN2507 −6
RN2508 −7
Emitter-base voltage
RN2509
V
EBO
−15
V
Collector current I
C
−100 mA
Collector power dissipation P
C
* 300 mW
Junction temperature T
j
150 °C
Storage temperature range
RN2507 to RN2509
T
stg
−55 to150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
SMV
JEDEC
―
JEITA
―
TOSHIBA
2-3L1A
Weight: 14mg (typ.)
Type No. R1 (kΩ)R2 (kΩ)
RN2507 10
47
RN2508 22
47
RN2509 47
22
Unit: mm
Equivalent Circuit
(top view)
