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PSMN165-200K,518

P1-P3P4-P6P7-P9P10-P12P13-P13
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Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
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Team Nexperia
PSMN165-200K
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 02 — 3 December 2009 Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
Computer motherboards
DC-to-DC convertors
Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 150 °C - - 200 V
I
D
drain current T
sp
=80°C;
see Figure 1
and 3
--2.9A
P
tot
total power
dissipation
T
sp
=80°C;
see Figure 2
--3.5W
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=3A;
V
DS
= 100 V; T
j
=25°C;
see Figure 11
- 12 16.5 nC
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
=10V; I
D
=2.5A;
T
j
=25°C;
see Figure 9 and 10
- 130 165 mΩ
PSMN165-200K_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 3 December 2009 2 of 12
NXP Semiconductors
PSMN165-200K
N-channel TrenchMOS SiliconMAX standard level FET
2. Pinning information
3. Ordering information
4. Limiting values
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1S source
SOT96-1 (SO8)
2S source
3S source
4G gate
5D drain
6D drain
7D drain
8D drain
4
5
1
8
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
PSMN165-200K SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 150 °C - 200 V
V
GS
gate-source voltage -20 20 V
I
D
drain current T
sp
=80°C; see Figure 1 and 3 -2.9A
I
DM
peak drain current T
sp
=25°C; t
p
≤ 10 µs; pulsed - 20 A
P
tot
total power dissipation T
sp
=80°C; see Figure 2 -3.5W
T
stg
storage temperature -55 150 °C
T
j
junction temperature -55 150 °C
Source-drain diode
I
S
source current T
sp
=80°C - 3.1 A
I
SM
peak source current T
sp
=25°C; t
p
≤ 10 µs; pulsed - 20 A
P1-P3P4-P6P7-P9P10-P12P13-P13

PSMN165-200K,518

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Buy PSMN165-200K,518
Manufacturer:
Nexperia
Description:
RF Bipolar Transistors MOSFET TAPE13 MOSFET
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New from this manufacturer.
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