VS-80APS16PbF, VS-80APS16-M3
www.vishay.com
Vishay Semiconductors
Revision: 11-Feb-16
1
Document Number: 93795
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage, Input Rectifier Diode, 80 A
FEATURES
• Very low forward voltage drop
• 150 °C max. operating junction temperature
• Glass passivated pellet chip junction
• Designed and qualified according to
JEDEC
®
-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
PRODUCT SUMMARY
Package TO-247AC
I
F(AV)
80 A
V
R
1600 V
V
F
at I
F
1.17 V
I
FSM
1150 A
T
J
max. 150 °C
Diode variation Single die
Base
cathode
+
2
13
node
--
Anode
Available
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Sinusoidal waveform 80 A
V
RRM
1600 V
I
FSM
1150 A
V
F
80 A, T
J
= 25 °C 1.17 V
T
J
-40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM
PEAK REVERSE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
VS-80APS16PbF, VS-80APS16-M3 1600 1700 1
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 100 °C, 180° conduction half sine wave 80
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 965
10 ms sine pulse, no voltage reapplied 1150
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 4655
A
2
s
10 ms sine pulse, no voltage reapplied 6585
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 65 850 A
2
s
