Data Sheet 7 Revision 3.1
2017-09-14
BGA8U1BN6
Low Noise Amplifier for Ultra High Band 4-6GHz (f.e. LTE - U/ LAA with bypass)
Application Information
4 Application Information
Application Board Configuration
Figure 2 Application Schematic BGA8U1BN6
Note: No external DC blocking capacitor at RFin is required in typical applications as long as no DC is applied.
A list of all application notes is available at http://www.infineon.com/ltelna
Table 5 Bill of Materials
Name Value Package Manufacturer Function
C1 (optional) 1nF 0402 Various Input matching
C2 (optional) ≥ 1nF 0402 Various RF bypass
1)
1) RF bypass recommended to mitigate power supply noise
N1 BGA8U1BN6 TSNP-6-2 Infineon SiGe LNA
BGA8U1BN6_Schematic.vsd
N1 BGA8U1BN6
GND, 5
AI, 6
GPIO1, 4
GPIO2, 1
AO, 3
VCC, 2
C1
(optional)
RFin
VCC
RFout
GPIO2
GPIO1
GND
C2
